Topologie | Gegentaktwandler (Halbbrücken) |
Eingangsspannung | 80 V |
Schaltfrequenz | 100-10000 kHz |
Ausgang 1 | 80 V / 10 A |
The EVAL-LT8418-BZ evaluation circuit features the LT8418 driving two 100V enhanced Gallium Nitride (eGaN) FETs in a half-bridge configuration. The circuit is optimized as a buck converter, but it can be used as a boost converter or other converter topologies consisting of a half-bridge. The evaluation circuit can deliver up to 10A with good thermal management.An external single or two PWM signals are required to drive the board, depending on the configuration. In the single-input setup, the dead time circuitry on the board is utilized to generate the complement signal and set the dead time. The dead time circuitry is bypassed in the dual-input setup. The LT8418 driver has powerful 0.2Ω pull-down and 0.6Ω pull-up drivers driving two 100V GaN FETs. It also integrates a smart integrated bootstrap switch to generate a balanced bootstrap voltage from VCC with a minimum dropout voltage. The LT8418 provides split gate drivers to adjust the turn-on and turn-off slew rates of GaN FETs to suppress ringing and optimize EMI performance.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR (V (DC)) | Bauform | Betriebstemperatur | DF (%) | RISO | Keramiktyp | L (mm) | W (mm) | Fl (mm) | L (µH) | IRP,40K (A) | ISAT,30% (A) | RDC typ. (mΩ) | RDC max. (mΩ) | fres (MHz) | Montageart | Ti | Ø OD (mm) | Ø ID (mm) | VPE | κ (W/(m*K)) | Pins (Value) (pcs) | Reihen | H (mm) | Gender | Typ | IR (A) | Verpackung | Muster | |
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885012206046 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WCAP-CSGP MLCCs 16 V(DC) | 100 nF | ±10% | 16 | 0603 | -55 °C up to +125 °C | 3.5 | 5 GΩ | X7R Klasse II | 1.6 | 0.8 | 0.4 | – | – | – | – | – | – | – | – | – | – | 4000 | – | – | – | 0.8 | – | – | – | 7" Tape & Reel | |||
9774010151R | SPEC | – | 6 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WA-SMSI SMT Stahl Spacer mit Innengewinde M2.5 | – | – | – | – | -55 °C up to +150 °C | – | – | – | 1 | – | – | – | – | – | – | – | – | – | M2.5 | 5.1 | 3.5 | 1500 | – | – | – | – | – | – | – | Tape and Reel | ||
60800213421 | SPEC | – | 3 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WR-PHD 2.00 mm Jumper with Test Point | – | – | – | – | -25 °C up to +105 °C | – | 1000 MΩ | – | – | – | – | – | – | – | – | – | – | – | – | – | – | 1000 | – | 2 | – | – | Jumper | – | 3 | Beutel | ||
62000311121 | SPEC | – | 6 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WR-PHD 2.00 mm THT Pin Header | – | – | – | – | -40 °C up to +105 °C | – | 1000 MΩ | – | 6 | – | – | – | – | – | – | – | – | THT | – | – | – | 1000 | – | 3 | Single | – | Pin Header | Gerade | 2 | Beutel | ||
74439369047 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-XHMI SMT Speicherdrossel | – | – | – | 1090 | -40 °C up to +125 °C | – | – | – | 11.6 | 10.5 | – | 4.7 | 20 | 28.05 | 5 | 5.5 | 21 | SMT | – | – | – | 300 | – | 2 | – | 8.8 | – | – | 13.5 | – | |||
4051100100017 | SPEC | – | 3 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-TGS Graphitfolie | – | – | – | – | -50 °C up to +120 °C | – | – | – | 100 | 100 | – | – | – | – | – | – | – | – | – | – | – | – | 1800 | – | – | 0.037 | – | – | – | – |
Artikel Nr. | Datenblatt | Simulation | |
---|---|---|---|
885012206046 | SPEC | ||
9774010151R | SPEC | – | |
60800213421 | SPEC | – | |
62000311121 | SPEC | – | |
74439369047 | SPEC | ||
4051100100017 | SPEC | – |
Muster |
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Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR (V (DC)) | Bauform | Betriebstemperatur | DF (%) | RISO | Keramiktyp | L (mm) | W (mm) | Fl (mm) | L (µH) | IRP,40K (A) | ISAT,30% (A) | RDC typ. (mΩ) | RDC max. (mΩ) | fres (MHz) | Montageart | Ti | Ø OD (mm) | Ø ID (mm) | VPE | κ (W/(m*K)) | Pins (Value) (pcs) | Reihen | H (mm) | Gender | Typ | IR (A) | Verpackung | Muster |
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