IC-Hersteller Analog Devices

IC-Hersteller (103)

Analog Devices LTC3775

High Frequency Synchronous Step-Down Voltage Mode DC/DC Controller

Details

TopologieAbwärtswandler
Eingangsspannung5-36 V
Schaltfrequenz250-1000 kHz
Ausgang 11.2 V / 10 A
IC-RevisionA

Beschreibung

The LTC® 3775 is a high effi ciency synchronous step-down switching DC/DC controller that drives an all N-channel power MOSFET stage from a 4.5V to 38V input supply voltage. A patented line feedforward compensation circuitand a high bandwidth error amplifi er provide very fast line and load transient response.

High step-down ratios are made possible by a low 30ns minimum on-time, allowing extremely low duty cycles.MOSFET RDS(ON) current sensing maximizes effi ciency. Alternatively, a sense resistor can be used for higher current limit accuracy. Continuous monitoring of the voltages across the top and bottom MOSFETs allows cycle-by-cycle control of the inductor current, confi gurable by external resistors.

The soft-start function controls the duty cycle during start-up, providing a smooth output voltage ramp up. The operating frequency is user programmable from 250kHz to 1MHz and can be synchronized to an external clock.

Eigenschaften

  • Wide VIN Range: 4.5V to 38V
  • Line Feedforward Compensation
  • Low Minimum On-Time: tO (MIN) < 30ns
  • Powerful Onboard MOSFET Drivers
  • Leading Edge Modulation Voltage Mode Control
  • ±0.75%, 0.6V Reference Voltage Accuracy Over Temperature
  • VOUT Range: 0.6V to 0.8VIN
  • Programmable, Cycle-by-Cycle Peak Current Limit
  • Sense Resistor or RDS(ON) Current Sensing
  • Programmable Soft-Start
  • Synchronizable Fixed Frequency from 250kHz to 1MHz
  • Selectable Pulse-Skipping or Forced Continuous Modes of Operation
  • Low Shutdown Current: 14μA Typical
  • Thermally Enhanced 16-Lead MSOP and 3mm × 3mm QFN Packages

Typische Anwendungen

  • Telecom
  • Point of Load Applications
  • Industrial Power Supplies
  • Automotive Systems

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
Muster
WE-HCI SMT-Hochstrominduktivität, 1.1 µH, 19.6 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität1.1 µH
Performance Nennstrom19.6 A
Sättigungsstrom 16 A
Sättigungsstrom @ 30%13 A
Gleichstromwiderstand3.15 mΩ
Eigenresonanzfrequenz135 MHz
MaterialSuperflux