IC-Hersteller Analog Devices

IC-Hersteller (103)

Analog Devices LTC3887

Dual Output PolyPhase Step-Down DC/DC

Details

TopologieAbwärtswandler
Eingangsspannung7-14 V
Ausgang 11.2 V / 25 A
Ausgang 21.8 V / 25 A
IC-RevisionD

Beschreibung

The LTC®3887/LTC3887-1 are dual, PolyPhase DC/DCsynchronous step-down switching regulator controllerswith an I2C-based PMBus compliant serial interface. Thecontrollers use a constant frequency, current mode architecturethat is supported by LTpowerPlay® a softwaredevelopment tool with graphical user interface (GUI).Switching frequency, channel phasing, output voltage,and device address can be programmed using externalconfiguration resistors. Additionally, parameters can beset via the digital interface or stored in EEPROM. Voltage,current, internal/external temperature and fault status canbe read back through the bus interface.The LTC3887 has integrated gate drivers. The LTC3887-1has three-state PWM pins to drive power blocks or DrMOSpower stages. The LTC3887 is an enhanced version of theLTC3880 with greater output voltage range and more digitalfeatures. Refer to page 15 for more detail.

Eigenschaften

  • PMBus/I2C Compliant Serial Interface
    • Telemetry Read Back includes VIN, IIN, VOUT, IOUT,
    • Temperature, Duty Cycle and Faults
    • Programmable Voltage, Current Limit, DigitalSoft-Start/Stop, Sequencing, Margining, OV/UVand Frequency Synchronization (250kHz to 1MHz)
  • ±0.5% Output Voltage Accuracy Over Temperature
  • Integrated 16-Bit ADC
  • VOUT Range: 0.5V to 5.5V (VOUT0, VOUT1)
  • Internal EEPROM and Fault Logging with ECCnn Integrated N-Channel MOSFET Gate Drivers (LTC3887)
  • Minimum On-Time 45ns
  • Wide VIN Range: 4.5V to 24V
  • Analog Current Mode Control Loop
  • Remote Differential Sense for PolyPhase® Applications
  • Accurate PolyPhase Current Sharing for Up to Six Phases
  • Available in a 40-Pin (6mm × 6mm) QFN Package

Typische Anwendungen

  • Telecom, Datacom and Storage Systems
  • High Current Distributed Power Systems / Intelligent Energy Efficient Power Regulation

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
Muster
WE-HCI SMT-Hochstrominduktivität, 0.16 µH, 57.2 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität0.16 µH
Performance Nennstrom57.2 A
Sättigungsstrom 124 A
Sättigungsstrom @ 30%58 A
Gleichstromwiderstand0.51 mΩ
Eigenresonanzfrequenz400 MHz
MaterialSuperflux