Topologie | Abwärtswandler |
Eingangsspannung | 7-140 V |
Schaltfrequenz | 50-900 kHz |
Ausgang 1 | 12 V / 5 A |
The LTC®3895 is a high performance step-down switchingregulator DC/DC controller that drives an all N-channelsynchronous power MOSFET stage that can operate frominput voltages up to 140V. A constant frequency currentmode architecture allows a phase-lockable frequency of upto 850kHz.The gate drive voltage can be programmed from 5V to 10Vto allow the use of logic or standard-level FETs to maximizeefficiency. An integrated switch in the top gate drivereliminates the need for an external bootstrap diode. Aninternal charge pump allows for 100% duty cycle operation.The low 40μA no-load quiescent current extends operatingrun time in battery-powered systems. OPTI-LOOP® compensationallows the transient response to be optimizedover a wide range of output capacitance and ESR values.The LTC3895 features a precision 0.8V reference andpower good output indicator. The output voltage can beprogrammed between 0.8V to 60V using external resistorsor pin-programmed for a fixed 5V or 3.3V.
Wide VIN Range: 4V to 140V (150V Abs Max)
Wide Output Voltage Range: 0.8V to 60V
Adjustable Gate Drive Level: 5V to 10V (OPTI-DRIVE)
Low Operating IQ: 40μA (Shutdown = 10μA)
100% Duty Cycle Operation
No External Bootstrap Diode Required
Selectable Gate Drive UVLO Thresholds
On-board LDO or External NMOS LDO for DRVCC
EXTVCC LDO Powers Drivers from VOUT
Phase-Lockable Frequency (75kHz to 850kHz)
Programmable Fixed Frequency (50kHz to 900kHz)
Selectable Continuous, Pulse Skipping or Low RippleBurst Mode® Operation at Light Loads
Adjustable Burst Clamp and Current Limit
Adjustable or Fixed (5V/3.3V) Output Voltage
Power Good Output Voltage Monitor
Programmable Input Overvoltage Lockout
38-Lead TSSOP High Voltage Package
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (µH) | IRP,40K (A) | ISAT1 (A) | ISAT,30% (A) | RDC max. (mΩ) | fres (MHz) | Muster | |
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7443633300 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-HCF SMT-Hochstrominduktivität | 33 | 13.3 | 9.5 | 11 | 12.54 | 12 |
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7443633300 | SPEC |
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Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (µH) | IRP,40K (A) | ISAT1 (A) | ISAT,30% (A) | RDC max. (mΩ) | fres (MHz) | Muster |
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