IC-Hersteller Analog Devices

IC-Hersteller (103)

Analog Devices LTC7802

40V Low IQ, 3MHz Dual, 2-Phase Synchronous Step-Down Controller with Spread Spectrum

Details

TopologieAbwärtswandler
Eingangsspannung4.5-38 V
Schaltfrequenz100-3000 kHz
Ausgang 12.5 V / 10 A
Ausgang 21 V / 20 A

Beschreibung

The LTC®7802 is a high performance dual step-down synchronous DC/DC switching regulator controller that drives all N-channel power MOSFET stages. Constant fre¬quency current mode architecture allows a phase-lockable switching frequency of up to 3MHz. The LTC7802 oper¬ates from a wide 4.5V to 40V input supply range. Power loss and supply noise are minimized by operating the two controller output stages out-of-phase. The very low no-load quiescent current extends oper¬ating runtime in battery powered systems. OPTI-LOOP compensation allows the transient response to be opti¬mized over a wide range of output capacitance and ESR values. The LTC7802 features a precision 0.8V reference and power good output indicators. The MODE pin selects among Burst Mode operation, pulse-skipping mode, or continuous inductor current mode at light loads.

Eigenschaften

  • Wide Input Voltage Range: 4.5V to 40V
  • Wide Output Voltage Range: 0.8V to 99% - VIN
  • Low Operating IQ: 14μA (14V to 3.3V, Channel 1 On)
  • Spread Spectrum Operation
  • RSENSE or DCR Current Sensing
  • Out-of-Phase Controllers Reduce Required Input Capacitance and Power Supply Induced Noise
  • Programmable Fixed Frequency (100kHz to 3MHz)
  • Phase-Lockable Frequency (100kHz to 3MHz)
  • Selectable Continuous, Pulse-Skipping, or Low Ripple, Burst Mode® Operation at Light Loads
  • Very Low Dropout Operation: 99% Duty Cycle
  • Power Good Output Voltage Monitors
  • Output Overvoltage Protection
  • Internal LDO Powers Gate Drive from VIN or EXTVCC
  • Low Shutdown IQ: 1.5μA
  • Small 28-Lead 4mm × 5mm QFN Package

Typische Anwendungen

  • Automotive and Transportation
  • Industrial
  • Military/Avionics

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(nH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
LR(nH)
IR(A)
Muster
WE-HCM SMT-Hochstrominduktivität, 200 nH, 54.3 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität200 nH
Performance Nennstrom54.3 A
Sättigungsstrom 144 A
Sättigungsstrom @ 30%50.4 A
Gleichstromwiderstand0.37 mΩ
Eigenresonanzfrequenz45 MHz
MaterialMnZn 
Nenninduktivität198 nH
Nennstrom25 A
WE-HCI SMT-Hochstrominduktivität, 1000 nH, 16.8 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität1000 nH
Performance Nennstrom16.8 A
Sättigungsstrom 18 A
Sättigungsstrom @ 30%19 A
Gleichstromwiderstand4.6 mΩ
Eigenresonanzfrequenz85 MHz
MaterialSuperflux 
Nenninduktivität780 nH