Topologie | Abwärtswandler |
Eingangsspannung | 8-75 V |
Schaltfrequenz | 100-3000 kHz |
Ausgang 1 | 3.3 V / 12 A |
Ausgang 2 | 5 V / 12 A |
The LTC7890 is a high performance, dual step-down, dc-to-dc switching regulator controller that drives all N-channel synchronous gallium nitride (GaN) field effect transistor (FET) power stages from input voltages up to 100 V. The LTC7890 solves many of the challenges traditionally faced when using GaN FETs. The LTC7890 simplifies the application design while requiring no protection diodes and no other additional external components compared to a silicon metal-oxide semiconductor field effect transistor (MOSFET) solution.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (µH) | IRP,40K (A) | ISAT1 (A) | ISAT,30% (A) | RDC max. (mΩ) | Material | LR (µH) | fres (MHz) | Muster | |
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![]() | 7443330100 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-HCC SMT-Hochstrominduktivität | 1 | 27.2 | 26.5 | 31.1 | 2.65 | Ferrite | 0.95 | 100 | ||
![]() | 7443320150 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-HCC SMT-Hochstrominduktivität | 1.5 | 25.7 | 26.5 | 29.1 | 3.5 | Ferrite | 1.43 | 92 |
Artikel Nr. | Datenblatt | Simulation | |
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![]() | 7443330100 | SPEC | |
![]() | 7443320150 | SPEC |
Muster |
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Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (µH) | IRP,40K (A) | ISAT1 (A) | ISAT,30% (A) | RDC max. (mΩ) | Material | LR (µH) | fres (MHz) | Muster |
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