IC-Hersteller Analog Devices

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Analog Devices LTC7893 | Demoboard EVAL-LTC7893-AZ

High Frequency Step-Up Controller with GaN FETs

Details

TopologieAufwärtswandler
Eingangsspannung8-36 V
Schaltfrequenz100-3000 kHz
Ausgang 148.3 V / 18 A

Beschreibung

The evaluation circuit EVAL-LTC7893-AZ is a single output synchronous step-up converter that drives GaN field effect transistors (FETs). The EVAL-LTC7893-AZ evaluation board features 100V GaN FETs.The EVAL-LTC7893-AZ features the LTC®7893: a low quiescent current, high frequency (programmable fixed frequency from 100kHz up to 3MHz), step-up DC/DC synchronous controller, with a dedicated driver feature for GaN FETs, which can also be used to drive logic-level silicon FETs.The EVAL-LTC7893-AZ operates over an input voltage range from 8V to 36V and produces a 48V output with load current up to 18A (without heatsink). A mode selector allows the EVAL-LTC7893-AZ to operate in forced continuous operation, pulse-skipping or Burst Mode® operation during light loads. The EVAL-LTC7893-AZ is set to 500kHz switching frequency, which results in a small and efficient circuit.

Eigenschaften

GaN Drive Technology Fully Optimized for GaN FETsOutput Voltage Up to 100VWide VIN Range: 4V to 60V and Operates Down to 1V after Start-UpNo Catch, Clamp, or Bootstrap Diodes NeededInternal Smart Bootstrap Switches Prevent Overcharging of High-Side Driver SupplyResistor-Adjustable Dead TimesSplit-Output Gate Drivers for Adjustable Turn On and Turn Off Driver StrengthsAccurate Adjustable Driver Voltage and UVLOLow Operating IQ: 15μAProgrammable Frequency (100kHz to 3MHz)Synchronizable Frequency (100kHz to 3MHz)Spread Spectrum Frequency Modulation28-Lead (4mm × 5mm), Side Wettable, QFN PackageAEC-Q100 Qualified for Automotive Applications

Typische Anwendungen

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieL
(µH)
IRP,40K
(A)
ISAT1
(A)
ISAT,30%
(A)
RDC max.
(mΩ)
fres
(MHz)
L
(mm)
TiØ OD
(mm)
Ø ID
(mm)
VPEPins (Value)
(pcs)
ReihenH
(mm)
GenderTypIR
(A)
Verpackung Muster
7443630310SPEC
8 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-HCF SMT-Hochstrominduktivität 3.1 33.15 41 45 2.3 29 20.8 100 2 13.5 33.1
9774010243RSPEC
6 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WA-SMSI SMT Stahl Spacer mit Innengewinde M2 1 M2 4.35 2.8 1500 Tape and Reel
62000621121SPEC
6 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WR-PHD 2.00 mm THT Dual Pin Header 6 1000 6 Dual Pin Header Gerade 2 Beutel
Artikel Nr. Daten­blatt Simu­lation
7443630310SPEC
9774010243RSPEC
62000621121SPEC
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieL
(µH)
IRP,40K
(A)
ISAT1
(A)
ISAT,30%
(A)
RDC max.
(mΩ)
fres
(MHz)
L
(mm)
TiØ OD
(mm)
Ø ID
(mm)
VPEPins (Value)
(pcs)
ReihenH
(mm)
GenderTypIR
(A)
Verpackung Muster