Cambridge GaN Devices CGD65B130SH2 | Demoboard CGD-ASYEVB02201-01 / CGD-UG2202

Beschreibung

The Half Bridge Evaluation Board allows ICeGaN variants to be used with a readily available silicon MOSFET driver, demonstrating state of the art performance combined with easy implementation of ICeGaN into an existing design.This evaluation board is available in a number of variants with matched high side & low side devices, with either 55mΩ, 130mΩ 5x6, 130mΩ 8x8, 200mΩ 5x6 or 240mΩ 5x6 650 V GaN HEMTs and variable gate drive voltage from 9 V to 20 V.All board functionality is identical for all variants.

Eigenschaften

2 x 650 V CGD Enhancement Mode GaN HEMTs with ICeGaN™ Gate  2 x Silicon Labs SI8271AB-IS Isolated Gate Driver (1 per side), adjustable drive amplitude 9-20 V

Typische Anwendungen

• SMPS applications

Weiterführende Informationen

• Datenblatt
• Produktseite des IC-Herstellers