IC-Hersteller Cambridge GaN Devices

IC-Hersteller (99)

Cambridge GaN Devices CGD65B240SH2 | Demoboard CGD-ASYEVB01601-01 / CGD-UG2202

Two CGD ICeGaN Devices Driven by Standard MOSFET Drivers With Variable Gate Drive Voltage

Details

TopologieGegentaktwandler (Halbbrücken)
Eingangsspannung0-18 V
Ausgang 1650 V
IC-Revision1

Beschreibung

The Half Bridge Evaluation Board allows ICeGaN variants to be used with a readily available silicon MOSFET driver, demonstrating state of the art performance combined with easy implementation of ICeGaN into an existing design.This evaluation board is available in a number of variants with matched high side & low side devices, with either 55mΩ, 130mΩ 5x6, 130mΩ 8x8, 200mΩ 5x6 or 240mΩ 5x6 650 V GaN HEMTs and variable gate drive voltage from 9 V to 20 V.All board functionality is identical for all variants.

Eigenschaften

2 x 650 V CGD Enhancement Mode GaN HEMTs with ICeGaN™ Gate

  • 2 x Silicon Labs SI8271AB-IS Isolated Gate Driver (1 per side), adjustable drive amplitude 9-20 V

Typische Anwendungen

  • PSUs, Industrial SMPS and inverters
  • LED lighting
  • Gaming PSUs, PC power

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Downloads Status ProduktseriePins (Value)
(pcs)
ReihenGenderTypIR
(A)
Verpackung Muster
61000421121SPEC
6 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WR-PHD 2.54 mm SMT Dual Pin Header 4 Dual Pin Header Gerade 3 Tube
Artikel Nr. Daten­blatt
61000421121SPEC
Muster
Artikel Nr. Daten­blatt Downloads Status ProduktseriePins (Value)
(pcs)
ReihenGenderTypIR
(A)
Verpackung Muster