Topologie | Gegentaktwandler (Halbbrücken) |
Eingangsspannung | 0-18 V |
Ausgang 1 | 650 V |
IC-Revision | 1 |
The Half Bridge Evaluation Board allows ICeGaN variants to be used with a readily available silicon MOSFET driver, demonstrating state of the art performance combined with easy implementation of ICeGaN into an existing design.This evaluation board is available in a number of variants with matched high side & low side devices, with either 55mΩ, 130mΩ 5x6, 130mΩ 8x8, 200mΩ 5x6 or 240mΩ 5x6 650 V GaN HEMTs and variable gate drive voltage from 9 V to 20 V.All board functionality is identical for all variants.
2 x 650 V CGD Enhancement Mode GaN HEMTs with ICeGaN™ Gate
Artikel Nr. | Datenblatt | Downloads | Status | Produktserie | Pins (Value) (pcs) | Reihen | Gender | Typ | IR (A) | Verpackung | Muster | |
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61000421121 | SPEC | 6 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WR-PHD 2.54 mm SMT Dual Pin Header | 4 | Dual | Pin Header | Gerade | 3 | Tube |
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61000421121 | SPEC |
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Artikel Nr. | Datenblatt | Downloads | Status | Produktserie | Pins (Value) (pcs) | Reihen | Gender | Typ | IR (A) | Verpackung | Muster |
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