IC-Hersteller Diodes Incorporated

IC-Hersteller (98)

Diodes Incorporated AL8890Q | Demoboard AL8890QEV2

60V SYNCHRONOUS BUCK CONVERTER

Details

TopologieAbwärtswandler
Eingangsspannung3.8-60 V
Schaltfrequenz300-2500 kHz
Ausgang 10.8 V / 3.5 A
IC-Revision1

Beschreibung

The AL8890Q is a synchronous buck converter with internalcompensation and switching frequency adjustable up to2.5MHz. The device integrates a 120mΩ high-side powerMOSFET and a 55mΩ low-side power MOSFET to providehigh-efficiency DC-DC conversion.The AL8890Q enables a continuous load current of up to 3.5Awith efficiency as high as 95% in enhanced biased. The devicefeatures current mode control operation, which enables easyloop stabilization supporting a wide range of output loading,suitable for both CV (Constant Voltage) and CC (ConstantCurrent) applications.

Eigenschaften

  • AEC-Q100 Grade1
  • VIN 3.8V to 60V
  • Wide VOUT Range: 0.8V to near 100% of VIN
  • VOUT 1% Accuracy
  • VFB Adjustable through SS/TR Pin
  • Synchronous Rectification > 95% Efficiency @12V▪ High-Side (120mΩ) Power MOSFET▪ Low-Side (55mΩ) Power MOSFETs
  • Low Quiescent Current 43μA
  • Switching Frequency 300kHz to 2.5MHz
  • Force PWM or PFM Mode through MYSNC
  • Synchronization to External Clock
  • Programmable Startup Control▪ Startup with Pre-Biased Output▪ External Soft-Start with Tracking▪ High Voltage Enable Pin with High Precision
  • Protection and Diagnosis Functions▪ Power Good (PG) Detection▪ Thermal Shutdown Protection
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The AL88902Q is suitable for automotive applicationsrequiring specific change control; this part is AEC-Q100qualified, PPAP capable, and manufactured in IATF 16949certified facilities.

Typische Anwendungen

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieL
(µH)
IRP,40K
(A)
ISAT1
(A)
ISAT,30%
(A)
RDC
(mΩ)
fres
(MHz)
Material Muster
744325650SPEC
8 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-HCI SMT-Hochstrominduktivität 6.5 11 4.4 10 12.5 27 Superflux
Artikel Nr. Daten­blatt Simu­lation
744325650SPEC
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieL
(µH)
IRP,40K
(A)
ISAT1
(A)
ISAT,30%
(A)
RDC
(mΩ)
fres
(MHz)
Material Muster