IC-Hersteller Diodes Incorporated

IC-Hersteller (97)

Diodes Incorporated AP66300Q | Demoboard AP66300QFVBW-EVM

3.8V TO 60V Input Automotive Grade, 3A Low IQ Synchronous Buck Converter

Details

TopologieAbwärtswandler
Eingangsspannung3.8-60 V
Ausgang 150 V / 3 A
IC-Revision1

Beschreibung

The DIODES™ AP66300Q is an adjustable switching frequency internal compensated synchronous DC-DC buck converter with a default internal frequency of 500kHz. The device fully integrates a 120mΩ high-side power MOSFET and a 55mΩ low-side power MOSFET to provide high-efficiency step-down DC-DC conversion. The device enables a continuous load current of up to 3A with efficiency as high as 95% in enhanced biased. It features current mode control operation, which enables easy loop stabilization supporting a wide range of output capacitive loads.The AP66300Q simplifies board layout and reduces space requirements with its high level of integration and minimal need for external components, making it ideal for distributed power architectures.The AP66300Q is available in the standard Green U-QFN4040-16/SWP (Type UXB) package.

Eigenschaften

Qualified for Automotive ApplicationsAEC-Q100 Qualified with the Following ResultsDevice Temperature Grade 1: -40°C to +125°C TADevice HBM ESD Classification Level H1CDevice CDM ESD Classification Level C3BVIN8 to 60V3A Continuous Output CurrentVOUT Adjustable from 0.8V to 50VEnhanced Efficiency Mode with BiasAdjustable Switching Frequency; 500kHz Default FrequencyStart-up with Pre-biased OutputExternal Soft-Start with Tracking – Sequential, Ratiometric, or Absolute; Default Internal Soft-Start of 1.7msEnable Pin with 5% toleranceSoft Discharge±5% Power Good Detection with Internal Pull-up ResistorOvercurrent Protection (OCP) with HiccupThermal Protection

Typische Anwendungen

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieL
(µH)
IRP,40K
(A)
ISAT1
(A)
ISAT,30%
(A)
RDC
(mΩ)
fres
(MHz)
Material Muster
744325650SPEC
8 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-HCI SMT-Hochstrominduktivität 6.5 11 4.4 10 12.5 27 Superflux
Artikel Nr. Daten­blatt Simu­lation
744325650SPEC
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieL
(µH)
IRP,40K
(A)
ISAT1
(A)
ISAT,30%
(A)
RDC
(mΩ)
fres
(MHz)
Material Muster