Topologie | Gegentaktwandler (Halbbrücken) |
Eingangsspannung | 36-75 V |
Ausgang 1 | 0.5 V / 50 A |
IC-Revision | D |
The LMG5200POLEVM-10 EVM is designed to evaluate the LMG5200 GaN power stage and the TPS53632G half-bridge point-of-load controller in a 48-V to 1-V applicationThis EVM implements the 48- V to 1-V converter as a single-stage hard-switched half-bridge with current-doubler rectifierThis topology efficiently supports a high step-down ratio while providing significant output current and fast transient responseThe TPS53632G controller uses a D-CAP+ hysteretic control architecture to achieve superior transient responseThe TPS53632G is a variant of the TPS53632 controller, modified to support the half-bridge topology used in this EVMThe LMG5200 is an 80-V, 10-A half-bridge power stage using gallium-nitride (GaN) transistorsGaN offers superior switching performance to traditional silicon MOSFETs due to its lack of reverse-recovery effect and reduced input and output capacitanceBy using a GaN module, this application achieves high efficiency while operating in a hard-switched configurationThis EVM guide describes correct operation and measurement of the EVM, as well as the EVM construction and typical performance
Artikel Nr. | Datenblatt | Simulation | |
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150060GS75000 | SPEC | ||
744308025 | SPEC Anstehende PCNAufgrund einer anstehenden PCN wird in Kürze eine Änderung am Bauteil durchgeführt. Anbei finden Sie die entsprechende PCN. Bei weiteren Fragen wenden Sie sich bitte an Ihren Vertriebsmitarbeiter. |
Muster |
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Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | λDom typ. (nm) | Farbe | λPeak typ. (nm) | IV typ. (mcd) | VF typ. (V) | Chiptechnologie | 2θ50% typ. (°) | L (nH) | LR (nH) | IR (A) | ISAT1 (A) | ISAT,30% (A) | RDC (mΩ) | fres (MHz) | Material | Muster |
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