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Details
| Topologie | Gegentaktwandler (Halbbrücken) |
| Eingangsspannung | 280 V |
| Ausgang 1 | 4 A |
| IC-Revision | 1.0 |
Beschreibung
The EPC9084 development board is a 350 V maximum device voltage, 5 A maximum output current, half bridge development board. The EPC9084 board measures 2” x 2” and contains a 350 V EPC2050 enhancement mode (eGaN®) field effect transistor (FET) with the Silicon Labs SiXXX gate driver.To simplify the evaluation process of the EPC2050 GaN FET, all the critical components are included on a single board that can be easily connected into any existing converter.This board may be used for applications where high efficiency can enable a significant performance advantage as well as a size and weight reduction such as multi-level AC/DC power supplies, electric vehicle on-board charging, and solar power inverters.
Weiterführende Informationen
Artikeldaten
| Artikel Nr. | Datenblatt | Downloads | Status | Produktserie | Pins (Value) (pcs) | Reihen | Gender | Typ | IR (A) | Verpackung | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 61300111121 | SPEC | 6 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WR-PHD 2.54 mm THT Pin Header | 1 | Single | Pin Header | Gerade | 3 | Beutel | |
 | 61300211121 | SPEC | 6 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WR-PHD 2.54 mm THT Pin Header | 2 | Single | Pin Header | Gerade | 3 | Beutel |
| Artikel Nr. | Datenblatt | |
|---|---|---|
| 61300111121 | SPEC |
| 61300211121 | SPEC |
| Muster |
|---|
| Artikel Nr. | Datenblatt | Downloads | Status | Produktserie | Pins (Value) (pcs) | Reihen | Gender | Typ | IR (A) | Verpackung | Muster |
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