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Details
| Topologie | Gegentaktwandler (Halbbrücken) |
| Eingangsspannung | 280 V |
| Ausgang 1 | 4 A |
| IC-Revision | 1.0 |
Beschreibung
The EPC9084 development board is a 350 V maximum device voltage, 5 A maximum output current, half bridge development board. The EPC9084 board measures 2” x 2” and contains a 350 V EPC2050 enhancement mode (eGaN®) field effect transistor (FET) with the Silicon Labs SiXXX gate driver.To simplify the evaluation process of the EPC2050 GaN FET, all the critical components are included on a single board that can be easily connected into any existing converter.This board may be used for applications where high efficiency can enable a significant performance advantage as well as a size and weight reduction such as multi-level AC/DC power supplies, electric vehicle on-board charging, and solar power inverters.
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Downloads | Status | Produktserie | Pins | Typ | Montageart | L(mm) | IR(A) | Arbeitsspannung(V (AC)) | Betriebstemperatur | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WR-PHD Stiftleisten - Einreihig, 1, Gerade | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Stiftleisten - Einreihig | Pins1 | TypGerade | MontageartTHT | Länge2.54 mm | Nennstrom3 A | Arbeitsspannung250 V (AC) | Betriebstemperatur -40 °C up to +105 °C | |||
 | WR-PHD Stiftleisten - Einreihig, 2, Gerade | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Stiftleisten - Einreihig | Pins2 | TypGerade | MontageartTHT | Länge5.08 mm | Nennstrom3 A | Arbeitsspannung250 V (AC) | Betriebstemperatur -40 °C up to +105 °C |