EPC NC7SZ00L6X | Demoboard EPC9003C

Beschreibung

The EPC9003C development board is a 200 V maximum device voltage,22 A maximum output current, half bridge with onboard gate drives,featuring the EPC2010C GaN field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2010C by including all the critical components on a single board that can be easily connected into the majority of existing converter topologies.The EPC9003C development board measures 2” x 2” and contains two EPC2010C GaN FETs in a half bridge configuration with the On-Semi NCP51820 gate driver. The board also contains all critical components and the layout supports optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A block diagram of the circuit is given in figure 1.For more information on EPC2010C please refer to the datasheet available from EPC at www.epc-co.com. The datasheet should be read in conjunction with this quick start guide.

Typische Anwendungen

• This product is general usage and suitable for many different applications.

Weiterführende Informationen

• Datenblatt
• Produktseite des IC-Herstellers