EPC NC7SZ08L6X | Demoboard EPC9010C

Beschreibung

The EPC9010C development board is a 100 V maximum device voltage, 7 A maximum output current, half bridge with onboard gate drives,featuring the EPC2016C enhancement mode (eGaN®) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2016C eGaN FET by including all the critical components on a single board that can be easily connected into the majority of existing converter topologies. The EPC9010C development board measures 2” x 2” and contains two EPC2016C eGaN FETs in a half bridge configuration with the uPI Semiconductor uP1966A gate driver. The board also contains all critical components and the layout supports optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A block diagram of the circuit is given in figure 1.For more information on the EPC2016C please refer to the datasheet available from EPC at www.epc-co.com. The datasheet should be read in conjunction with this quick start guide.

Typische Anwendungen

• This product is general usage and suitable for many different applications.

Weiterführende Informationen

• Datenblatt
• Produktseite des IC-Herstellers