EPC NC7SZ08L6X | Demoboard EPC90122

Beschreibung

The EPC90122 development board is a 80 V maximum device voltage, 40 A maximum output current, half bridge with onboard gate drives, featuring the EPC2206 enhancement mode (eGaN®) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2206 eGaN FET by including all the critical components on a single board that can be easily connected into the majority of existing converter topologies. The EPC90122 development board measures 2” x 2” and contains two EPC2206 eGaN FETs in a half bridge configuration using the Texas Instruments LMG1205 gate driver. The board also contains all critical components and the layout supports optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A block diagram of the circuit is given in figure 1. For more information on the EPC2206 please refer to the datasheet available from EPC at www.epc-co.com. The datasheet should be read in conjunction with this quick start guide.

Typische Anwendungen

• This product is general usage and suitable for many different applications.

Weiterführende Informationen

• Datenblatt
• Produktseite des IC-Herstellers