IC-Hersteller GaN Systems

IC-Hersteller (99)

GaN Systems GS66516B | Demoboard GSP65RXXHB-EVB

High Power IMS Evaluation Platform

Details

TopologieGegentaktwandler (Halbbrücken)
Schaltfrequenz10000 kHz
IC-Revision210914

Beschreibung

A frequent challenge for power designers is to engineer a product that has excellent power density while simultaneously reducing the cost of the system.This IMS evaluation platform demonstrates an inexpensive way to improve heat transfer, to increase power density and reduce system cost. An Insulated Metal Substrate PCB (IMS PCB) is used to cool GaN Systems’ bottom-side cooled power transistors. An IMS PCB is also known as Metal Core/Aluminum PCB.

Eigenschaften

  • 650 V enhancement mode power transistor -Bottom-side cooled configuration
  • RDS(on) = 25 mΩ
  • IDS(max) = 60 A
  • Ultra-low FOM die
  • Low inductance GaNPX® package
  • Simple drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 V / +10 V) -Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 11 x 9 mm2 PCB footprint
  • Source Sense (SS) pins for optimized gate drive
  • Dual Gate Pins for optimal paralleling
  • RoHS 3 (6 + 4) compliant

Typische Anwendungen

  • Energy Storage Systems, Solar Energy
  • On Board Battery Chargers
  • Uninterruptible Power Supplies
  • AC-DC Converters, DC-DC Converters, Bridgeless Totem Pole PFC, Inverters, Industrial Motor Drives, Laser Drivers, Traction Drive

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Downloads Status ProduktserieH
(mm)
Ø OD
(mm)
IR 1
(A)
ToTlo
(mm)
Muster
7466213SPEC
5 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WP-SMSH REDCUBE SMT with external thread 8 7 50 M3 5
Artikel Nr. Daten­blatt
7466213SPEC
Muster
Artikel Nr. Daten­blatt Downloads Status ProduktserieH
(mm)
Ø OD
(mm)
IR 1
(A)
ToTlo
(mm)
Muster