Infineon Technologies 1ED3121Mx12H | Demoboard EVAL-1ED3121Mx12H

Beschreibung

The EVAL-1ED3121MX12H is in half-bridge configuration with two gate driver ICs (1ED3121MU12H) to drive power switches such as IGBTs and SiC MOSFETs. This board comes with TRENCHSTOP™ IGBT IKQ75N120CH3. An additional gate driver IC is used for isolated over-current feedback signal from high voltage side to logic control side. Fast operational amplifier is used as comparator for over-current detection. This board is best suited for double-pulse testing.1ED3121MU12H belongs to the EiceDRIVER™ Compact 1ED31xx family (X3 compact family). 1ED3121 offers separate sink and source output, accurate and stable timing, active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power, short-circuit clamping to limit the gate voltage during short circuit. The driver can operate over a wide supply voltage range, either unipolar or bipolar.

Eigenschaften

• EiceDRIVER™ Compact single channel isolated gate driver 1ED31xx family (X3 compact family)
• For up to 2300 V IGBTs, SiC and Si MOSFETs
• 2300 V functional offset voltage capable for selected applications
• Galvanically isolated coreless transformer gate driver
• 5.5 A typical sinking and sourcing peak output current
• 40 V absolute maximum output supply voltage
• 90 ns propagation delay with 30 ns input filter
• High common-mode transient immunity CMTI >200 kV/μs
• Separate source and sink outputs
• Short-circuit clamping and active shutdown
• DSO-8 300 mil wide-body package with large creepage distance (>8 mm)
• 10.5 V/12.5 V undervoltage lockout (UVLO) protection with hysteresis

Typische Anwendungen

• Solutions for solar energy systems
• Motor control and drives
• Uninterruptible Power Supply (UPS)

Weiterführende Informationen

• Datenblatt
• Produktseite des IC-Herstellers