Infineon Technologies 1EDC20H12AH | Demoboard EVAL-1EDC20H12AH-SIC

Beschreibung

The gate driver evaluation board EVAL-1EDC20H12AH-SIC with the EiceDRIVER™ 1EDC20H12AH or 1EDI20H12AH and CoolSiC™ MOSFET IMZ120R045M1 are developed to demonstrate the functionality and key features of the Infineon EiceDRIVER™ gate driver IC and Infineon CoolSiC™ MOSFET.The board comes with either the 1EDC20H12AH or the 1EDI20H12AH gate driver installed.The 1EDC20H12AH offers a certification according to UL1577 while the 1EDI20H12AH is the functional insulatedvariant. All other components and functions are the same.The boards contain a short circuit protection to turn OFF the CoolSiC™ MOSFET within about 1.5 μs after a short circuit event. Main features of the boards are described in the key feature section of this document, whereas the remaining paragraphs provide information intended to enable the users to copy, modify and qualify the designfor production, according to their own specific requirements.

Eigenschaften

• Single channel isolated IGBT driver
• For 600 V/650 V/1200 V IGBTs, MOSFETs and SiC MOSFETs
• Up to 10 A typical peak current at rail-to-rail outputs
• Separate source and sink outputs
• Galvanically isolated coreless transformer driver
• Wide input voltage operating range
• Suitable for operation at high ambient temperature
• Recognized under UL 1577 with an insulation test voltage of VISO = 3000 V for 1 s

Typische Anwendungen

• AC and brushless DC motor drives, High voltage DC/DC-converter and DC/AC-inverter, Induction heating resonant application,welding and solar
• UPS-systems

Weiterführende Informationen

• Datenblatt
• Produktseite des IC-Herstellers