Topologie | Leistungsfaktor-Korrektur |
Eingangsspannung | 85-265 V |
Schaltfrequenz | 4000 kHz |
Ausgang 1 | 400 V / 6.25 A |
IC-Revision | 2.0 |
The 1EDI60N12AF is a galvanically isolated single channel MOSFET driver in a PG-DSO-8-51 package that provides output currents of at least 6 A at separated output pins. The input logic pins operate on a wide input voltage range from 3 V to 15 V using CMOS threshold levels to support even 3.3 V microcontroller. Data transfer across the isolation barrier is realized by the Coreless Transformer Technology. Every driver family member comes with logic input and driver output under voltage lockout (UVLO) and activeshutdown.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (µH) | IR (A) | ISAT (A) | RDC max. (Ω) | fres (MHz) | L1 (mH) | IR 1 (A) | RDC1 max. (mΩ) | Muster | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
74454133 | SPEC | – | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-PD3 SMT-Speicherdrossel | 33 | 1.2 | 1.8 | 0.16 | 12 | – | – | – | ||
744824101 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Design Kit WE-CMB / WE-CMB HC / WE-CMB NiZn Stromkompensierte Netzdrosseln | 1000 | 10 | – | 0.007 | – | 1 | 10 | 7 |
Muster |
---|
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (µH) | IR (A) | ISAT (A) | RDC max. (Ω) | fres (MHz) | L1 (mH) | IR 1 (A) | RDC1 max. (mΩ) | Muster |
---|