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Onsemi NCP51820 | Demoboard NCP51820GAN1GEVB
NCP51820GAN1GEVB: NCP51820 GaN driver evaluation board for 650 V, 50 mOhm E-mode GaN HEMT
Details
| Topologie | Sperrwandler |
| IC-Revision | 1.0 |
Beschreibung
he NCP51820 HB GaN Driver Evaluation Board (EVB) is intended to replace the driver and power MOSFETs used in existing half−bridge or full−bridge power supplies. This EVB highlights the performance, simplicity and minimal number of components required to efficiently and reliably drive two gallium nitride power switches used in a high−voltage, totem pole configuration. Intended applications include off−line power converter topologies such as: LLC, phase−shifted full−bridge, totem pole PFC, active clamp flyback and forward, dual active−bridge, Phi−2 and high voltage synchronous buck.
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Downloads | Status | Produktserie | Pins | Typ | Montageart | L(mm) | IR(A) | Arbeitsspannung(V (AC)) | Betriebstemperatur | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Stiftleisten - Einreihig | Pins6 | TypGerade | MontageartTHT | Länge15.24 mm | Nennstrom3 A | Arbeitsspannung250 V (AC) | Betriebstemperatur -40 °C up to +105 °C |