IC-Hersteller Silicontent Technology
IC-Hersteller (97)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (15)
- Ablic (23)
- Advanced Power (4)
- Allegro Microsystems (81)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (172)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Broadcom (47)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (232)
- Divimath (8)
- Elmos AG (1)
- EPC (99)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (7)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- Ikanos (3)
- IKON (1)
- Indie Semiconductor (5)
- Innovision Semiconductor Inc (2)
- Intel (80)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (2)
- Kinetic Technology (10)
- Lattice semiconductor Corporation (20)
- Littelfuse (1)
- M3 Technology (M3Tek) (7)
- Macnica (16)
- MaxLinear (178)
- MikroE (7)
- MindCet (2)
- Monolithic Power Systems (908)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (31)
- Nisshinbo Micro Device Inc. (10)
- Nordic Semiconductor (1)
- Novosense Micro (1)
- NXP (314)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (112)
- Pulsiv (19)
- Qorvo (86)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (296)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (90)
- SG-Micro (32)
- Silanna Semiconductor (8)
- Silergy Corporation (30)
- Silicon Laboratory Inc. (104)
- Silicontent Technology (57)
- Silvertel (56)
- Skycore Semiconductors (1)
- Skyworks (32)
- Southchip (8)
- Summit Wireless (1)
- Tagore Tech (4)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (18)
- Wolfspeed (7)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Silicontent Technology SCT1270 | Demoboard SCT1270 Synchronous Boost Converter
12.6V, 7A Fully Integrated High Efficiency Synchronous Boost Converter
Details
| Topologie | Aufwärtswandler |
| Eingangsspannung | 2.7-12 V |
| Schaltfrequenz | 200-2200 kHz |
| Ausgang 1 | 12.6 V |
| IC-Revision | 0.8 |
Beschreibung
The EV1270-B-01A Evaluation Board is designed to demonstrate the capabilities of SCT1270, a high efficiency fully integrated synchronous boost converter. It offers a very compact solution to achieve up to small size power solution for portable equipment. The constant off-time peak current-mode operation provides fast transient response and eases loop stabilization. The device features include over-current protection, output over voltage protection and thermal shutdown. The SCT1270 is available in a spacesaving 11-pin QFN 2mmx2.5mm package.This user's guide describes the characteristics, operation and the use of the EV1270-B-01A Evaluation Module including EVM specifications, recommended test setup, test result, schematicdiagram, bill of materials, and the board layout.
Eigenschaften
- Wide Input Voltage Range: 2.7V-12V
- Wide Output Voltage Range: 4.5V-12.6V
- Fully Integrated 17mΩ High Side FET and 16mΩ Low Side FET
- Programmable and Up to 9.5A Peak Switch Current Limit
- Adjustable Switching Frequency: 200KHz to 2.2MHz
- PFM Operation Mode at Light Load (SCT1270)
- Forced PWM Operation Mode at Light Load (SCT12701)
- Internal Soft Start and External Compensation
- Cycle-by-Cycle Overcurrent Protection
- Output Overvoltage Protection
- Thermal Shutdown Protection: 160°C
- QFN-11 2mm x 2.5mm Package
Typische Anwendungen
- Bluetooth Speaker,
- Portable POS Terminal
- Lighting
Weiterführende Informationen
Artikeldaten
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR (V (DC)) | Bauform | Betriebstemperatur | DF (%) | RISO | Keramiktyp | L (mm) | W (mm) | H (mm) | Fl (mm) | Verpackung | L (µH) | IRP,40K (A) | ISAT1 (A) | ISAT,30% (A) | RDC (mΩ) | fres (MHz) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 885012206063 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WCAP-CSGP MLCCs 25 V(DC) | 4.7 nF | ±10% | 25 | 0603 | -55 °C up to +125 °C | 3.5 | 10 GΩ | X7R Klasse II | 1.6 | 0.8 | 0.8 | 0.4 | 7" Tape & Reel | – | – | – | – | – | – | – | ||
| 885012206071 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WCAP-CSGP MLCCs 25 V(DC) | 100 nF | ±10% | 25 | 0603 | -55 °C up to +125 °C | 3.5 | 5 GΩ | X7R Klasse II | 1.6 | 0.8 | 0.8 | 0.4 | 7" Tape & Reel | – | – | – | – | – | – | – | ||
| 885012106018 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WCAP-CSGP MLCCs 16 V(DC) | 2.2 µF | ±20% | 16 | 0603 | -55 °C up to +85 °C | 10 | 0.05 GΩ | X5R Klasse II | 1.6 | 0.8 | 0.8 | 0.4 | 7" Tape & Reel | – | – | – | – | – | – | – | ||
 | 744313220 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-HCI SMT-Hochstrominduktivität | – | – | – | 1335 | -40 °C up to +150 °C | – | – | – | 12.9 | 12.8 | 3.3 | – | – | 2.2 | 19.4 | 8 | 18 | 5.7 | 40 | Superflux |
| Artikel Nr. | Datenblatt | Simulation | |
|---|---|---|---|
| 885012206063 | SPEC | |
| 885012206071 | SPEC | |
| 885012106018 | SPEC | |
| 744313220 | SPEC |
| Muster |
|---|
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR (V (DC)) | Bauform | Betriebstemperatur | DF (%) | RISO | Keramiktyp | L (mm) | W (mm) | H (mm) | Fl (mm) | Verpackung | L (µH) | IRP,40K (A) | ISAT1 (A) | ISAT,30% (A) | RDC (mΩ) | fres (MHz) | Material | Muster |
|---|
