Texas Instruments ISO5852SDWR | Demoboard TIDA-01606 Gate driver

Beschreibung

This verified reference design provides an overview on how to implement a three-level three-phase SiC based DC:AC grid-tie inverter stage.Higher switching frequency of 50KHz reduces the size of magnetics for the filter design and enables higher power density. The use of SiC MOSFETs with switching loss ensures higher DC bus voltages of up to 1000V and lower switching losses with a peak efficiency of 99 percent. This design is configurable to work as a two-level or three-level inverter.The system is controlled by a single C2000 microcontroller (MCU), TMS320F28379D, which generates PWM waveforms for all power electronic switching devices under all operating modes.

Eigenschaften

• Rated Nominal and Max Input Voltage at 800-V and 1000-V DC
• Max 10-kW/10-kVA Output Power at 400-V AC 50- or 60-Hz Grid-Tie Connection
• Operating Power Factor Range From 0.7 Lag to 0.7 Lead
• High-Voltage (1200-V) SiC MOSFET-Based FullBridge Inverter for Peak Efficiency of 98.5%
• Compact Output Filter by Switching Inverter at 50 kHz
• <2% Output Current THD at Full Load
• Isolated Driver ISO5852S With Reinforced Isolation for Driving High-Voltage SiC MOSFET and UCC5320S for Driving Middle Si IGBT
• Isolated Current Sensing Using AMC1301 for Load Current Monitoring
• TMS320F28379D Control Card for Digital Control

Typische Anwendungen

• Industrial Motor Control Drives / Industrial Power Supplies / Induction Heating
• HEV and EV Power Modules
• Solar Inverters

Weiterführende Informationen

• Datenblatt
• Produktseite des IC-Herstellers