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Texas Instruments LM5180-Q1 | Demoboard LM5180EVM-DUAL

Automotive 65-VIN PSR flyback converter with 100-V, 1.5-A integrated power MOSFET

Details

TopologieSperrwandler
Eingangsspannung10-65 V
Schaltfrequenz350 kHz
Ausgang 115 V / 0.2 A
Ausgang 2-7.7 V / 0.2 A

Beschreibung

The LM5180-Q1 is a primary-side regulated (PSR) flyback converter with high efficiency over a wide input voltage range of 4.5 V to 65 V. The isolated output voltage is sampled from the primary-side flyback voltage, eliminating the need for an optocoupler, voltage reference, or third winding from the transformer for output voltage regulation. The high level of integration results in a simple, reliable and high-density design with only one component crossing the isolation barrier. Boundary conduction mode (BCM) switching enables a compact magnetic solution and better than ±1.5% load and line regulation performance. An integrated 100-V power MOSFET provides output power up to 7 W with enhanced headroom for line transients.The LM5180-Q1 converter simplifies implementation of isolated DC/DC supplies with optional features to optimize performance for the target end equipment. The output voltage is set by one resistor, while an optional resistor improves output voltage accuracy by negating the thermal coefficient of the flyback diode voltage drop. Additional features include an internally-fixed or externally-programmable soft start, optional bias supply connection for higher efficiency, precision enable input with hysteresis for adjustable line UVLO, hiccup-mode overload protection, and thermal shutdown protection with automatic recovery.The LM5180-Q1 is qualified to automotive AEC-Q100 grade 1 and is available in 8-pin WSON package with 0.8-mm pin pitch and wettable flanks.

Eigenschaften

  • 10-V to 65-V input voltage range
  • 15-V and -7.7-V output voltages
  • Rated for up to 200 mA of load current
  • Resistor divider to EN/UVLO to faciltate programmable input voltage UVLO
  • Fully assembled, tested and proven PCB layout with small footprint

Typische Anwendungen

  • Isolated bias power rails, IGBT gate drive supplies for BDC and BLDC motor drives
  • Industrial and commercial vehicles
  • Automotive body and powertrain

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieCTol. CVR
(V (DC))
BauformBetriebstemperaturDF
(%)
RISOKeramiktypL
(mm)
W
(mm)
H
(mm)
Fl
(mm)
VerpackungL
(µH)
IR
(mA)
ISAT
(A)
fres
(MHz)
MontageartEndurance
(h)
BetriebstemperaturIRIPPLE
(mA)
Z
(mΩ)
ILeak
(µA)
Ø D
(mm)
VinVOut1
(V)
IOut1
(A)
VOut2
(V)
IOut2
(A)
nIR 1
(mA)
RDC1 max.
(Ω)
LS
(nH)
VT
(V (AC))
Z @ 100 MHz
(Ω)
Zmax
(Ω)
Testbedingung ZmaxIR 2
(mA)
RDC max.
(Ω)
Typ Muster
865060845002SPEC
8 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WCAP-ASLL Aluminium-Elektrolytkondensatoren10 µF ±20% 100 6.3 x 7.7 -55 °C up to +105 °C 810 MΩ 7.7 6.6 15" Tape & Reel V-Chip SMT 2000 -55 °C bis zu +105 °C 65 3900 10 6.3
885012109004SPEC
8 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WCAP-CSGP MLCCs 6.3 V(DC)100 µF ±20% 6.3 1210 -55 °C up to +85 °C 100.001 GΩ X5R Klasse II 3.2 2.5 2.5 0.6 7" Tape & Reel
742792021SPEC
9 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-CBF SMT-Ferrit 0805 -55 °C up to +125 °C 2 1.2 0.9 0.5 4500 SMT -55 °C bis zu +125 °C 6000 0.008 22 40 1000 MHz 6000 0.008 High Current
744042100SPEC
8 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-TPC SMT-Speicherdrossel 4818 -40 °C up to +125 °C 4.8 4.8 1.8 10 1300 1 45 SMT -40 °C bis zu +125 °C 0.15
750317595SPEC
8 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-FLYTI MID-FLYTI Flyback Transformers for Texas Instruments EP7 -40 °C up to +125 °C 9.76 9.5 10.54 30 2.4 SMT 8 - 65 V (DC) 15 0.2 8 0.2 1.82:1.82:1 500 1500
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieCTol. CVR
(V (DC))
BauformBetriebstemperaturDF
(%)
RISOKeramiktypL
(mm)
W
(mm)
H
(mm)
Fl
(mm)
VerpackungL
(µH)
IR
(mA)
ISAT
(A)
fres
(MHz)
MontageartEndurance
(h)
BetriebstemperaturIRIPPLE
(mA)
Z
(mΩ)
ILeak
(µA)
Ø D
(mm)
VinVOut1
(V)
IOut1
(A)
VOut2
(V)
IOut2
(A)
nIR 1
(mA)
RDC1 max.
(Ω)
LS
(nH)
VT
(V (AC))
Z @ 100 MHz
(Ω)
Zmax
(Ω)
Testbedingung ZmaxIR 2
(mA)
RDC max.
(Ω)
Typ Muster