IC-Hersteller Texas Instruments
IC-Hersteller (99)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (27)
- Ablic (23)
- Advanced Power (4)
- Allegro Microsystems (84)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (172)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (47)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (238)
- Divimath (8)
- Elmos AG (1)
- EPC (99)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (7)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- Ikanos (3)
- IKON (1)
- Indie Semiconductor (5)
- Innovision Semiconductor Inc (2)
- Intel (80)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (2)
- Kinetic Technology (10)
- Lattice semiconductor Corporation (19)
- Littelfuse (1)
- M3 Technology (M3Tek) (7)
- Macnica (16)
- MaxLinear (175)
- MikroE (8)
- MindCet (2)
- Monolithic Power Systems (929)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (32)
- Nisshinbo Micro Device Inc. (10)
- Nordic Semiconductor (1)
- Novosense Micro (1)
- NXP (314)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (110)
- Pulsiv (19)
- Qorvo (87)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (296)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (90)
- SG-Micro (33)
- Silanna Semiconductor (8)
- Silergy Corporation (30)
- Silicon Laboratory Inc. (104)
- Silicontent Technology (57)
- Silvertel (56)
- Skycore Semiconductors (1)
- Skyworks (31)
- Southchip (8)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (18)
- Wise Integration (1)
- Wolfspeed (8)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Texas Instruments LM5180 | Demoboard RD001 - 5W
6 W Bipolar isolated auxiliary supply for SiC-MOSFET & IGBT gate driver
Details
| Topologie | Sperrwandler |
| Eingangsspannung | 18-36 V |
| Schaltfrequenz | 80-360 kHz |
| Ausgang 1 | 15 V / 0.32 A |
| Ausgang 2 | -4 V / 0.32 A |
| IC-Revision | G |
Beschreibung
This reference design presents an extremely compact auxiliary power supply with a combined output power up to 6 W. Three different isolated bipolar output voltages are provided: +15 V / -4 V, +19 V / -4 V and +20 V / -5 V. The design is optimized for driving high-voltage SiC-MOSFET and IGBT discrete devices as well as power modules in high-power converters, and can be easily integrated in the gate driver system. The extremely low interwinding capacitance of the WE-AGDT transformers down to 7 pF helps to achieve high CMTI rating (Common-Mode Transient Immunity). This enables fast switching speeds which can yield efficiency and power density gains, as increasingly required in trending applications in e-mobility,renewable energy or industrial automation.
Eigenschaften
- Small size(Var.A: 27 mm x 14 mm x 14 mm) (Var.B: 40 mm x 14 mm x 13 mm)
- 4 kV primary-secondary isolation
- Only 7 pF typ. parasitic capacitance enabling high CMTI
- PSR Flyback topology with LT8302 (ADI Power by Linear)
- Load/line regulation less than 1 % typ.
- Up to 88 % peak efficiency (86 % at 6 W)
- Standard and AEC-Q qualified component assembly variants
- Two PCB Layout Variants (2-layer and 4-layer)
Typische Anwendungen
- Renewable energy: Solar inverters
- Switch-mode power supplies with SiC MOSFETs
- Industrial drives: AC motor inverter
- On-board and Off-board battery chargers
- E-mobility: Electric Powertrain
Weiterführende Informationen
Artikeldaten
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR (V (DC)) | Bauform | Betriebstemperatur | DF (%) | RISO | Keramiktyp | L (mm) | W (mm) | H (mm) | Fl (mm) | Verpackung | Vin (V) | VOut1 (V) | VOut2 (V) | PO (W) | CWW 1 (pF) | L (µH) | ISAT (A) | fswitch (kHz) | n | Version | IC-Referenz | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 885012207102 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WCAP-CSGP MLCCs 50 V(DC) | 470 nF | ±10% | 50 | 0805 | -55 °C up to +125 °C | 3 | 1.1 GΩ | X7R Klasse II | 2 | 1.25 | 1.25 | 0.5 | 7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | ||
| 885012207103 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WCAP-CSGP MLCCs 50 V(DC) | 1 µF | ±10% | 50 | 0805 | -55 °C up to +125 °C | 10 | 0.1 GΩ | X7R Klasse II | 2 | 1.25 | 1.25 | 0.5 | 7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | ||
| 885012108022 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WCAP-CSGP MLCCs 50 V(DC) | 10 µF | ±10% | 50 | 1206 | -55 °C up to +85 °C | 10 | 0.005 GΩ | X5R Klasse II | 3.2 | 1.6 | 1.6 | 0.6 | 7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | ||
 | 750318208 | SPEC | 9 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-AGDT Auxiliary Gate Drive Transformer | – | – | – | EP7 | -40 °C up to +130 °C | – | – | – | 11.3 | 10.95 | 11.94 | – | – | 18 - 36 | 15 | -4 | 5 | 7 | 27 | 1.5 | 350 | 3.5:3.5:1 | Flyback | LM5180 |
| Artikel Nr. | Datenblatt | Simulation | |
|---|---|---|---|
| 885012207102 | SPEC | |
| 885012207103 | SPEC | |
| 885012108022 | SPEC | |
| 750318208 | SPEC |
| Muster |
|---|
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR (V (DC)) | Bauform | Betriebstemperatur | DF (%) | RISO | Keramiktyp | L (mm) | W (mm) | H (mm) | Fl (mm) | Verpackung | Vin (V) | VOut1 (V) | VOut2 (V) | PO (W) | CWW 1 (pF) | L (µH) | ISAT (A) | fswitch (kHz) | n | Version | IC-Referenz | Muster |
|---|