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Details
| Topologie | Abwärts- und Aufwärtswandler |
| Schaltfrequenz | 100-15000 kHz |
Beschreibung
The LMG1210EVM-012 is designed to evaluate the LMG1210 Megahertz 200V half-bridge driver for GaN FETs. This EVM consists on two Gallium Nitride FETs configured in a half-bridge, driven by a single LMG1210. No controller is present on the board.
Eigenschaften
Demonstrates high frequency capability of driverDemonstrates high CMTI withstand of the driverDemonstrates the excellent propagation and matching and strength of the driverDemonstrates the dead-time block functionaliy and the positive impact on efficiencyThis is a PCB (hardware), which is orderable and demonstrates the driver stage for a laser to be used in classD audio, Envelope Tracking and high-frequency DCDC applications.
Typische Anwendungen
Weiterführende Informationen
Artikeldaten
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR (V (DC)) | Bauform | Betriebstemperatur | DF (%) | RISO | Keramiktyp | L (mm) | W (mm) | H (mm) | Fl (mm) | Verpackung | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 885012208069 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WCAP-CSGP MLCCs 25 V(DC) | 10 µF | ±10% | 25 | 1206 | -55 °C up to +125 °C | 10 | 0.01 GΩ | X7R Klasse II | 3.2 | 1.6 | 1.6 | 0.5 | 7" Tape & Reel |
| Artikel Nr. | Datenblatt | Simulation | |
|---|---|---|---|
| 885012208069 | SPEC |
| Muster |
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| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR (V (DC)) | Bauform | Betriebstemperatur | DF (%) | RISO | Keramiktyp | L (mm) | W (mm) | H (mm) | Fl (mm) | Verpackung | Muster |
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