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Texas Instruments LMG3410R050 | Demoboard LMG3410EVM-018

Using the LMG3410EVM-018 Half-Bridge and LMG34XXBB-EVM Breakout Board EVM

Details

TopologieGegentaktwandler (Halbbrücken)
Eingangsspannung480 V
Schaltfrequenz50-200 kHz
Ausgang 112 V / 0.7 A

Beschreibung

LMG3410EVM-018 configures two LMG3410R050 GaN FETs in a half bridge with all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.

Eigenschaften

  • Input voltage operates up to 600 V
  • Simple open loop design to evaluate performance of LMG3410R050
  • Single PWM input on board for PWM signal with 50 ns dead time
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes

Typische Anwendungen

  • Totem-Pole PFC converters, Phase-Shifted Full Bridge or LLC Converter, Buck converter such as the LMG34XX-BB-EVM

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieL
(µH)
IR
(A)
ISAT
(A)
RDC
(mΩ)
fres
(MHz)
VinVOut1
(V (DC))
IOut1
(A)
Isolierungstypfswitch
(kHz)
∫Udt
(Vµs)
NPRI : NSECVT
(V (AC))
L
(mm)
W
(mm)
H
(mm)
Montageart Muster
74404020100SPEC
8 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-LQS SMT-Speicherdrossel 10 0.5 0.6 860 39 2 1.6 1 SMT
760390014SPEC
7 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-PPTI Push-Pull Transformers 475 5 V (DC) 5 0.6 Functional 300 - 620 11 1:1.3 2500 6.73 10.2 4.19 SMT
Artikel Nr. Daten­blatt Simu­lation
74404020100SPEC
760390014SPEC
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieL
(µH)
IR
(A)
ISAT
(A)
RDC
(mΩ)
fres
(MHz)
VinVOut1
(V (DC))
IOut1
(A)
Isolierungstypfswitch
(kHz)
∫Udt
(Vµs)
NPRI : NSECVT
(V (AC))
L
(mm)
W
(mm)
H
(mm)
Montageart Muster