Texas Instruments LMG3422 | Demoboard PMP41017

Beschreibung

The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI's lowinductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.

Eigenschaften

• Qualified for JEDEC JEP180 for hard-switching topologies
• 600V GaN-on-Si FET with integrated gate driver
• Integrated high precision gate bias voltage
• 200V/ns FET hold-off
• 2.2MHz switching frequency
• 20V/ns to 150V/ns slew rate for optimization ofswitching performance and EMI mitigation
• Operates from 7.5V to 18V supply
• Robust protection
• Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100ns response
• Withstands 720V surge while hard-switching
• Self-protection from internal overtemperature and UVLO monitoring
• Advanced power management
• Digital temperature PWM output
• LMG3426R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters

Typische Anwendungen

• Merchant network and server PSU, Merchant telecom rectifiers
• Uninterruptible power supplies
• Solar inverters and industrial motor drives

Weiterführende Informationen

• Datenblatt
• Produktseite des IC-Herstellers