Topologie | Gegentaktwandler (Halbbrücken) |
Eingangsspannung | 650 V |
IC-Revision | B |
The LMG342xR050 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG342xR050 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI's lowinductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3425R050 includes ideal diode mode, which reduces thirdquadrant losses by enabling adaptive dead-time control. Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overtemperature, overcurrent, and UVLO monitoring.
Artikel Nr. | Datenblatt | Downloads | Status | Produktserie | Vin | VOut1 (V) | IOut1 (A) | Isolierungstyp | fswitch (kHz) | ∫Udt (Vµs) | NPRI : NSEC | L (µH) | VT (V (AC)) | L (mm) | W (mm) | H (mm) | Montageart | Muster | |
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750315371 | SPEC | 7 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-PPTI Push-Pull Transformers | 4.5 - 5.5 V (DC) | 5 | 1 | Functional | 400 - 700 | 8.6 | 1:1.1 | 72 | 2500 | 8.3 | 12.6 | 4.1 | SMT |
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Artikel Nr. | Datenblatt | Downloads | Status | Produktserie | Vin | VOut1 (V) | IOut1 (A) | Isolierungstyp | fswitch (kHz) | ∫Udt (Vµs) | NPRI : NSEC | L (µH) | VT (V (AC)) | L (mm) | W (mm) | H (mm) | Montageart | Muster |
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