Topologie | Gegentaktwandler (Halbbrücken) |
Eingangsspannung | 650 V |
Schaltfrequenz | 2200 kHz |
IC-Revision | A |
The LMG352XEVM-04X features two LMG352XR0X0 650-V GaN FETs with an integrated driver and protection in a half-bridge configuration with all the required bias circuit and logic/power level shifting. Essential power stage and gate-driving, high-frequency current loops are fully enclosed on the board to minimize power loop parasitic inductance for reducing voltage overshoots and improving performance. The LMG352XEVM-04X is configured for a socket style external connection for easy interface with external power stages to run the LMG352XR0X0 in various applications. Refer to the LMG352XR0X0 data sheet before using this EVM.
Artikel Nr. | Datenblatt | Downloads | Status | Produktserie | Vin | VOut1 (V) | IOut1 (A) | Isolierungstyp | fswitch (kHz) | ∫Udt (Vµs) | NPRI : NSEC | L (µH) | VT (V (AC)) | L (mm) | W (mm) | H (mm) | Montageart | Muster | |
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750315371 | SPEC | 7 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-PPTI Push-Pull Transformers | 4.5 - 5.5 V (DC) | 5 | 1 | Functional | 400 - 700 | 8.6 | 1:1.1 | 72 | 2500 | 8.3 | 12.6 | 4.1 | SMT |
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Artikel Nr. | Datenblatt | Downloads | Status | Produktserie | Vin | VOut1 (V) | IOut1 (A) | Isolierungstyp | fswitch (kHz) | ∫Udt (Vµs) | NPRI : NSEC | L (µH) | VT (V (AC)) | L (mm) | W (mm) | H (mm) | Montageart | Muster |
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