Topologie | Gegentaktflusswandler |
Eingangsspannung | 3.3-5.5 V |
Schaltfrequenz | 363-517 kHz |
Ausgang 1 | 16 V / 1.5 A |
The ISO5852SDWEVM-017 is a compact, dual chanel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for half-bridge Sic MOSFET and IGBT Power Modules in standard 62-mm package. This TI EVM is based on 5.7-kVrms reinforced isolation driver IC ISO5852SDW in SOIC-16DW package with 8.0 mm creepage and clearance. The EVM includes SN6505B based isolated bias supplies and temperature and bus voltage isolated monitoring by amplifiers AMC1401.
Artikel Nr. | Datenblatt | Downloads | Status | Produktserie | Vin | VOut1 (V (DC)) | IOut1 (A) | Isolierungstyp | fswitch (kHz) | ∫Udt (Vµs) | NPRI : NSEC | L (µH) | VT (V (RMS)) | L (mm) | W (mm) | H (mm) | Montageart | Muster | |
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750313734 | SPEC | 7 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-PPTI Push-Pull Transformers | 5 V (DC) | 5 | 0.8 | Reinforced | 300 - 620 | 10 | 1:1.1 | 340 | 5000 | 9.14 | 12.7 | 7.62 | SMT | ||
750312879 | SPEC | – | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Push-Pull Transformer | – | – | – | – | – | – | – | – | – | – | – | – | – |
Muster |
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Artikel Nr. | Datenblatt | Downloads | Status | Produktserie | Vin | VOut1 (V (DC)) | IOut1 (A) | Isolierungstyp | fswitch (kHz) | ∫Udt (Vµs) | NPRI : NSEC | L (µH) | VT (V (RMS)) | L (mm) | W (mm) | H (mm) | Montageart | Muster |
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