IC-Hersteller Texas Instruments

IC-Hersteller (99)

Texas Instruments TPA3250 | Demoboard TPA3250D2EVM

TPA3250 70W Stereo / 130W Peak Ultra-HD Analog-In Audio Class-D Pad-Down Module

Details

TopologieClass D Audio Amplifier
Eingangsspannung18-38 V
IC-RevisionA

Beschreibung

The TPA3250D2EVM Ultra-HD evaluation module demonstrates the TPA3250D2DDW integrated circuit from Texas Instruments. The TPA3250D2DDW is a high-performance class-D amplifier that enables true premium sound quality with high efficiency class-D technology. It features an advanced integrated feedback design and high-speed gate driver error correction (Ultra-HD), which enables ultra-low distortion across the audio band and superior audio quality. This EVM supports 2 BTL (stereo 2.0) output channels, 1 PBTL (mono 0.1) output channel, 1 BTL plus 2 SE (2.1) output channels, and 4 SE (4.0) output channels configurations. The NE5532 is a High Performance Audio Op Amp designed to allow TPA3250D2DDW operation with differential or single ended input signals to the EVM with differential inputs yielding the optimal performance. TPA3250D2EVM is a complete 2Vrms analog input 70 W stereo continuous/130W peak power amplifier ready for evaluation and excellent listening experience.

Eigenschaften

  • Stereo Ultra-HD evaluation module
  • Self-contained protection system (short circuit, clip and thermal)
  • Standard 2VRMS differential input or single ended line input
  • BTL, PBTL and SE output configurations support Double-sided, plated-through, 2oz. Cu 4 layer PCB layout
  • Frequency adjust and oscillator sync interface
  • Single supply voltage range 18–38 V
  • Double-sided, plated-through, 2-oz Cu, 4-layer PCB layout

Typische Anwendungen

  • Active Speakers, Blu-ray Disk™ / DVD Receivers, Mini Combo Systems, High End Soundbar

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieL
(µH)
ISAT
(A)
RDC max.
(mΩ)
fres
(MHz)
BauformVersion Muster
7447714101SPEC
8 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-PD SMT-Speicherdrossel 100 1.8 198 5.9 1050 Performance
Artikel Nr. Daten­blatt Simu­lation
7447714101SPEC
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieL
(µH)
ISAT
(A)
RDC max.
(mΩ)
fres
(MHz)
BauformVersion Muster