| Topologie | Abwärtswandler |
| Eingangsspannung | 5 V |
| Schaltfrequenz | 100-2500 kHz |
| Ausgang 1 | 1.5 V / 1 A |
| IC-Revision | 00 |
TPS54116-Q1 2.95-V to 6-V Input, 4-A Step-Down Converter and 1-A Source/Sink DDR Termination RegulatorThe TPS54116-Q1 buck regulator minimizes solutionsize by integrating the MOSFETs and reducinginductor size with up to 2.5-MHz switching frequency.The switching frequency can be set above themedium wave radio band for noise sensitiveapplications and is synchronizable to an externalclock. Synchronous rectification keeps the frequencyfixed across the entire output load range. Efficiency ismaximized through integrated 25-mΩ low-side and33-mΩ high-side MOSFETs. Cycle-by-cycle peakcurrent limit protects the device during an overcurrentcondition and is adjustable with a resistor at the ILIMpin to optimize for smaller inductors.
AEC-Q100 Qualified With the Following Results:– Device Temperature Grade 1: –40°C to+125°C Ambient Operating TemperatureRange– Device HBM ESD Classification Level 2– Device CDM ESD Classification Level C6
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | RDC max.(mΩ) | Montageart | Muster | |
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![]() | WE-LHMI SMT Speicherdrossel, 0.68 µH, 7.3 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | Induktivität0.68 µH | Performance Nennstrom7.3 A | Sättigungsstrom 17.1 A | Sättigungsstrom @ 30%14 A | – | Eigenresonanzfrequenz90 MHz | – | Gleichstromwiderstand19 mΩ | MontageartSMT | ||||
![]() | WE-HCI SMT-Hochstrominduktivität, 2 µH, 8.7 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität2 µH | Performance Nennstrom8.7 A | Sättigungsstrom 13 A | Sättigungsstrom @ 30%9 A | Gleichstromwiderstand14.2 mΩ | Eigenresonanzfrequenz58 MHz | MaterialSuperflux | Gleichstromwiderstand15.62 mΩ | MontageartSMT |