Cambridge GaN Devices CGD65A065S2 | Demoboard CGD-ASYEVB00105-01 / CGD-UG2204

Beschreibung

The CGD65A055S2 is an enhancement mode GaN-on-silicon power transistor, exploiting the unique material properties of GaN to deliver high current, high breakdown voltage, and high switching frequency for a wide range of electronics applications.The CGD65A055S2 features CGD’s ICeGaN™ gate technology enabling compatibility with virtually all gate drivers and controller chips available. The integrated current sense function eliminates the need for a separate current sense resistor and the associated efficiency losses. Because no external sense resistor is needed, the device can be directly soldered to the large copper area of the ground plane, improving the thermal performance and simplifying the thermal design.It comes in a DFN 8x8 SMD package to support high frequency operation while ensuring the highest thermal performance.

Eigenschaften

• Using ICeGaN™ 650 V, 55 mOhm in DFN 8x8 (2x)
• VIN 330-420 VDC
• VOUT 20 VDC
• Maximum Efficiency 96.3%

Typische Anwendungen

• PSUs, Industrial SMPS and inverters
• Gaming PSUs, PC power
• Server power and data centres, Telecom rectifiers

Weiterführende Informationen

• Datenblatt
• Produktseite des IC-Herstellers