Infineon Technologies 1EDI20H12AH | Demoboard REF-SIC-D2PAK-BP

Beschreibung

This Reference Board is a drive card of the CoolSiC™ MOSFET 1200 V evaluation platform and it contains the EiceDRIVER™ 1ED Compact 1EDI20H12AH with allowing a bipolar supply, where VCC2 is +15 V and GND2 is negative.The CoolSiC™ MOSFET 1200 V evaluation platform including EiceDRIVER™ gate driver IC was developed to show the driving options of the silicon carbide CoolSiC™ MOSFET in TO263-7pin. To show these options, the design was split into one motherboard and two drive cards for SMD. The motherboard EVAL_PS_SIC_DP_MAIN was designed for a maximum voltage of 800 V and a maximum pulsed current of 130 A.

Eigenschaften

• 1200V CoolSiC™ Silicon Carbide (SiC) Trench MOSFET IMBG120R030M1H
• 1EDI20H12AH with bipolar power supply
• Core-less isolated gate drivers
• Negative turn-off gate voltage
• Utilize the Insulated Metal Substrate (IMS)
• All components Surface Mounted Devices (SMD)

Typische Anwendungen

• Industrial motor drives and controls, Motor control and drives

Weiterführende Informationen

• Datenblatt
• Produktseite des IC-Herstellers