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Texas Instruments BQ25713RSNR | Demoboard BQ25713EVM-017

BQ25713 I2C NVDC Buck Boost Charger Evaluation Module

Details

TopologieAbwärts- und Aufwärtswandler
Eingangsspannung3.5-24 V
Schaltfrequenz800-1200 kHz
Ausgang 120.8 V / 8 A
IC-RevisionA

Beschreibung

The BQ25710EVM-017 and BQ25713EVM-017 evaluation modules (EVM) are SMBus or I 2C-controlled NVDC-1 buck boost charger. The input voltage range is between 3.5 V and 24 V, with a programmable output of 1–4 cells and a charge output current range of 64 mA to 8.128 A. This EVM does not include the EV2400 interface device; the EV2400 must be ordered separately to evaluate the BQ2571x EVM.

Eigenschaften

  • Evaluation module for the BQ2571x devices
  • Supports 3.5- to 24-V input source–3.5- to 24-V, 0- to 6-A input operating range and 1–4 cell battery configuration–Supports USB2.0, USB 3.0, USB 3.1 (USB Type-C™) and USB_PD–Supports USB OTG with 3- to 20.8-V adjustable output–Maximum Power Tracking by Input Voltage and Current Regulation
  • Narrow VDC (NVDC) power path management–Instant-on works with no battery or deeply discharged battery (PG1.0 needs charge-enable command)–Battery supplements system when adapter is fully-loaded
  • 800-kHz or 1.2-MHz switching frequency for low profile inductor
  • SMBus (BQ25710) or I2C (BQ25713) port for optimal system performance and status reporting
  • Power and Current Monitor for CPU Throttling
  • Safety–Thermal shutdown–Input and system overvoltage protection–MOSFET overcurrent protection
  • Accelerate charge time by battery path impedance compensation
  • Charge status outputs for LED or host processor
  • Maximum power tracking capability by input voltage regulation
  • Test points for key signals available for testing purposes. Easy probe hook-up.
  • Jumpers available. Easy-to-change connections.

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieL
(µH)
IRP,40K
(A)
ISAT1
(A)
ISAT,30%
(A)
RDC max.
(mΩ)
fres
(MHz)
Montageart Muster
74437356022SPEC
8 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-LHMI SMT Speicherdrossel 2.2 9.5 10 19.6 20.3 24 SMT
Artikel Nr. Daten­blatt Simu­lation
74437356022SPEC
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieL
(µH)
IRP,40K
(A)
ISAT1
(A)
ISAT,30%
(A)
RDC max.
(mΩ)
fres
(MHz)
Montageart Muster