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Texas Instruments LMG3522R030 | Demoboard PMP41078
High-voltage to low-voltage DC-DC converter reference design with GaN HEMT
Details
| Topologie | Gegentaktwandler (Halbbrücken) |
| Eingangsspannung | 200-450 V |
| Ausgang 1 | 16 V / 250 A |
| IC-Revision | 1 |
Beschreibung
This reference design describes a 3.5kW highvoltage to low-voltage DC-DC converter with 650V Gallium nitride (GaN) high-electron mobility transistors (HEMT). Using LMG3522R030 as primary switches makes the converter work at a high switching frequency. In this design, the converter uses a smaller size transformer. To ease the thermal performance of active clamping metal-oxide semiconductor fieldeffect transistors (MOSFETs), the converter uses twochannel active clamping circuits.
Eigenschaften
GaN based phase-shifted full-bridge (PSFB) using LMG3522 and controlled using C29 microcontroller unit (MCU)200kHz switching frequency, magnetic size is 35% less than 100kHz95.48% at 200kHz, 400V Vin, 13.5V Vout, about 1kWDual active clamping circuits for high-frequency scenario and low synchronous rectifier (SR) MOSFET voltage stressLight load efficiency optimization promotes maximum 5% efficiency
Typische Anwendungen
- Automotive DCDC converter
Weiterführende Informationen
Artikeldaten
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (µH) | VT (V (AC)) | IRP,40K (A) | ISAT1 (A) | ISAT,30% (A) | RDC (mΩ) | fres (MHz) | Material | RDC typ. (mΩ) | RDC max. (mΩ) | Montageart | Vin | VOut1 (V (DC)) | IOut1 (mA) | Isolierungstyp | fswitch (kHz) | ∫Udt (Vµs) | NPRI : NSEC | L (mm) | W (mm) | H (mm) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 744316220 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-HCI SMT-Hochstrominduktivität | 2.2 | – | 9.2 | 3.5 | 7.5 | 11.3 | 108 | Superflux | – | 12.43 | SMT | – | – | – | – | – | – | – | 5.5 | 5.3 | 4 | ||
 | 74439346047 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-XHMI SMT Speicherdrossel | 4.7 | – | 9.6 | 6.5 | 13 | 13 | 28 | – | 13 | 14.3 | SMT | – | – | – | – | – | – | – | 6.65 | 6.45 | 6.1 | ||
 | 750319691 | SPEC | – | 7 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Push-Pull Transformer | 100 | 2500 | – | – | – | – | – | – | – | – | SMT | 12 V (DC) | 12 | 500 | Funktional | 400 - 600 | 23 | 1:1.14 | 8.5 | 13.12 | 5.5 | |
 | 760390014 | SPEC | – | 7 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-PPTI Push-Pull Transformers | 475 | 2500 | – | – | – | – | – | – | – | – | SMT | 5 V (DC) | 5 | 600 | Functional | 300 - 620 | 11 | 1:1.3 | 6.73 | 10.2 | 4.19 |
| Muster |
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| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (µH) | VT (V (AC)) | IRP,40K (A) | ISAT1 (A) | ISAT,30% (A) | RDC (mΩ) | fres (MHz) | Material | RDC typ. (mΩ) | RDC max. (mΩ) | Montageart | Vin | VOut1 (V (DC)) | IOut1 (mA) | Isolierungstyp | fswitch (kHz) | ∫Udt (Vµs) | NPRI : NSEC | L (mm) | W (mm) | H (mm) | Muster |
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