IC manufacturers (97)
- All manufacturers
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (15)
- Ablic (23)
- Advanced Power (4)
- Allegro Microsystems (81)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (172)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Broadcom (47)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (232)
- Divimath (8)
- Elmos AG (1)
- EPC (99)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (7)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- Ikanos (3)
- IKON (1)
- Indie Semiconductor (5)
- Innovision Semiconductor Inc (2)
- Intel (80)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (2)
- Kinetic Technology (10)
- Lattice semiconductor Corporation (20)
- Littelfuse (1)
- M3 Technology (M3Tek) (7)
- Macnica (16)
- MaxLinear (178)
- MikroE (7)
- MindCet (2)
- Monolithic Power Systems (908)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (31)
- Nisshinbo Micro Device Inc. (10)
- Nordic Semiconductor (1)
- Novosense Micro (1)
- NXP (314)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (112)
- Pulsiv (19)
- Qorvo (86)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (296)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (90)
- SG-Micro (32)
- Silanna Semiconductor (8)
- Silergy Corporation (30)
- Silicon Laboratory Inc. (104)
- Silicontent Technology (57)
- Silvertel (56)
- Skycore Semiconductors (1)
- Skyworks (32)
- Southchip (8)
- Summit Wireless (1)
- Tagore Tech (4)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (18)
- Wolfspeed (7)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Texas Instruments LMG3522R030 | Demoboard PMP41078
High-voltage to low-voltage DC-DC converter reference design with GaN HEMT
Overview
| Topology | Half-Bridge Converter symmetrical isolated |
| Input voltage | 200-450 V |
| Output 1 | 16 V / 250 A |
| IC revision | 1 |
Description
This reference design describes a 3.5kW highvoltage to low-voltage DC-DC converter with 650V Gallium nitride (GaN) high-electron mobility transistors (HEMT). Using LMG3522R030 as primary switches makes the converter work at a high switching frequency. In this design, the converter uses a smaller size transformer. To ease the thermal performance of active clamping metal-oxide semiconductor fieldeffect transistors (MOSFETs), the converter uses twochannel active clamping circuits.
Features
GaN based phase-shifted full-bridge (PSFB) using LMG3522 and controlled using C29 microcontroller unit (MCU)200kHz switching frequency, magnetic size is 35% less than 100kHz95.48% at 200kHz, 400V Vin, 13.5V Vout, about 1kWDual active clamping circuits for high-frequency scenario and low synchronous rectifier (SR) MOSFET voltage stressLight load efficiency optimization promotes maximum 5% efficiency
Typical applications
- Automotive DCDC converter
More information
Products
| Order Code | Datasheet | Simulation | Downloads | Status | Product series | L (µH) | VT (V (AC)) | IRP,40K (A) | ISAT,10% (A) | ISAT,30% (A) | RDC (mΩ) | fres (MHz) | Material | RDC typ. (mΩ) | RDC max. (mΩ) | Mount | VIN | VOut1 (V (DC)) | IOut1 (mA) | Type of Insulation | fswitch (kHz) | ∫Udt (Vµs) | NPRI : NSEC | L (mm) | W (mm) | H (mm) | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 744316220 | SPEC | 8 files | Active i| Production is active. Expected lifetime: >10 years. | WE-HCI SMT Flat Wire High Current Inductor | 2.2 | – | 9.2 | 3.5 | 7.5 | 11.3 | 108 | Superflux | – | 12.43 | SMT | – | – | – | – | – | – | – | 5.5 | 5.3 | 4 | ||
 | 74439346047 | SPEC | 8 files | Active i| Production is active. Expected lifetime: >10 years. | WE-XHMI SMT Power Inductor | 4.7 | – | 9.6 | 6.5 | 13 | 13 | 28 | – | 13 | 14.3 | SMT | – | – | – | – | – | – | – | 6.65 | 6.45 | 6.1 | ||
 | 750319691 | SPEC | – | 7 files | Active i| Production is active. Expected lifetime: >10 years. | Push-Pull Transformer | 100 | 2500 | – | – | – | – | – | – | – | – | SMT | 12 V (DC) | 12 | 500 | Functional | 400 - 600 | 23 | 1:1.14 | 8.5 | 13.12 | 5.5 | |
 | 760390014 | SPEC | – | 7 files | Active i| Production is active. Expected lifetime: >10 years. | WE-PPTI Push-Pull Transformers | 475 | 2500 | – | – | – | – | – | – | – | – | SMT | 5 V (DC) | 5 | 600 | Functional | 300 - 620 | 11 | 1:1.3 | 6.73 | 10.2 | 4.19 |
| Samples |
|---|
| Order Code | Datasheet | Simulation | Downloads | Status | Product series | L (µH) | VT (V (AC)) | IRP,40K (A) | ISAT,10% (A) | ISAT,30% (A) | RDC (mΩ) | fres (MHz) | Material | RDC typ. (mΩ) | RDC max. (mΩ) | Mount | VIN | VOut1 (V (DC)) | IOut1 (mA) | Type of Insulation | fswitch (kHz) | ∫Udt (Vµs) | NPRI : NSEC | L (mm) | W (mm) | H (mm) | Samples |
|---|
