IC-Hersteller Texas Instruments

IC-Hersteller (99)

Texas Instruments LMG5200 | Demoboard BOOSTXL-3PhGaNInv

80V GaN Half Bridge Power Stage

Details

TopologieAbwärtswandler
Eingangsspannung48 V
Ausgang 15 V / 10 A
IC-Revision001

Beschreibung

The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG5200 device is available in a 6 mm × 8 mm × 2 mm lead-free package and can be easily mounted on PCBs.The TTL logic compatible inputs can withstand input voltages up to 12 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor. When used with the TPS53632G controller, the LMG5200 enables direct conversion from 48-V to point-of-load voltages (0.5-1.5 V).

Eigenschaften

  • Integrated 15-mΩ GaN FETs and Driver
  • 80-V Continuous, 100-V Pulsed Voltage Rating
  • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements
  • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Causing Excessive Ringing in Hard-Switched Topologies
  • Ideal for Isolated and Non-Isolated Applications
  • Gate Driver Capable of Up to 10 MHz Switching
  • Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET Overdrive
  • Supply Rail Undervoltage Lockout Protection
  • Excellent Propagation Delay (29.5 ns Typical) and Matching (2 ns Typical)
  • Low Power Consumption

Typische Anwendungen

  • Servo drives and motion control / Computer numerical control (CNC) drives / Manufacturing robots / Service robots

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieλDom typ.
(nm)
FarbeλPeak typ.
(nm)
IV typ.
(mcd)
VF typ.
(V)
Chiptechnologie50% typ.
(°)
L
(µH)
ISAT1
(A)
ISAT,30%
(A)
IR,40K
(A)
IRP,40K
(A)
fres
(MHz)
BauformVersionZ @ 100 MHz
(Ω)
Zmax
(Ω)
Testbedingung ZmaxIR 2
(mA)
RDC max.
(Ω)
TypPins (Value)
(pcs)
FarbeGenderIR
(mA)
Verpackung Muster
150060GS75000SPEC
25 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WL-SMCW SMT Mono-color Chip LED Waterclear 525 Grün 515 430 3.2 InGaN 140 0603 Tape and Reel
74279272SPEC
9 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-CBF SMT-Ferrit 0402 SMT 300 400 380 MHz 700 0.8 Breitband 200
7447709101SPEC
8 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-PD Speicherdrossel 100 3.1 3.8 2.5 3.2 4.3 1210 Standard 0.11 2 2500
60900213421SPEC
3 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WR-PHD 2.54 mm Multi-Jumper Jumper with Test Point 1 Schwarz Jumper 3000 Beutel
Artikel Nr. Daten­blatt Simu­lation
150060GS75000SPEC
74279272SPEC
7447709101SPEC
60900213421SPEC
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieλDom typ.
(nm)
FarbeλPeak typ.
(nm)
IV typ.
(mcd)
VF typ.
(V)
Chiptechnologie50% typ.
(°)
L
(µH)
ISAT1
(A)
ISAT,30%
(A)
IR,40K
(A)
IRP,40K
(A)
fres
(MHz)
BauformVersionZ @ 100 MHz
(Ω)
Zmax
(Ω)
Testbedingung ZmaxIR 2
(mA)
RDC max.
(Ω)
TypPins (Value)
(pcs)
FarbeGenderIR
(mA)
Verpackung Muster