Topologie | Abwärtswandler |
Eingangsspannung | 48 V |
Ausgang 1 | 5 V / 10 A |
IC-Revision | 001 |
The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG5200 device is available in a 6 mm × 8 mm × 2 mm lead-free package and can be easily mounted on PCBs.The TTL logic compatible inputs can withstand input voltages up to 12 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor. When used with the TPS53632G controller, the LMG5200 enables direct conversion from 48-V to point-of-load voltages (0.5-1.5 V).
Artikel Nr. | Datenblatt | Simulation | |
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150060GS75000 | SPEC | ||
74279272 | SPEC | ||
7447709101 | SPEC | ||
60900213421 | SPEC | – |
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Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | λDom typ. (nm) | Farbe | λPeak typ. (nm) | IV typ. (mcd) | VF typ. (V) | Chiptechnologie | 2θ50% typ. (°) | L (µH) | ISAT1 (A) | ISAT,30% (A) | IR,40K (A) | IRP,40K (A) | fres (MHz) | Bauform | Version | Z @ 100 MHz (Ω) | Zmax (Ω) | Testbedingung Zmax | IR 2 (mA) | RDC max. (Ω) | Typ | Pins (Value) (pcs) | Farbe | Gender | IR (mA) | Verpackung | Muster |
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