IC-Hersteller Texas Instruments

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Texas Instruments TPS2373 | Demoboard TPS2373-3EVM-024

IEEE 802.3bt PoE high-power PD interface with advanced startup

Details

TopologieSonstige Topologie
Eingangsspannung0-57 V
Ausgang 112.14 V / 4.25 A
IC-RevisionA

Beschreibung

The TPS2373 contains all of the features needed to implement an IEEE802.3at or IEEE802.3bt (draft) (Type 1-4) powered device (PD). The low internal switch resistance allows the TPS2373-4 and TPS2373-3 to support high power applications up to 90 W and 60 W respectively. Assuming 100-meter CAT5 cable, this translates into 71.3 W and 51 W at PD input.The TPS2373 operates with enhanced features.The Advanced Startup function for DC-DC results in a simple, flexible, and minimal system cost solution, while ensuring that IEEE802.3bt (draft) startup requirements are met. It helps to reduce the size of the low voltage bias capacitor considerably. It also allows long DC-DC converter soft-start period and enables the use of a low-voltage PWM controller.The Automatic MPS function enables applications requiring very low power standby modes. The TPS2373 automatically generates the necessary pulsed current to maintain the PSE power. An external resistor is used to enable this functionality and to program the MPS pulsed current amplitude.

Eigenschaften

  • IEEE 802.3bt (Draft) PD Solution for Type 3 or Type 4 PoE
  • Supports Power Levels for Type-4 ( TPS2373-4) 90-W and Type-3 ( TPS2373-3) 60-W Operation
  • Robust 100 V Hotswap MOSFET
  • TPS2373-4 (typ.): 0.1-Ω, 2.2-A Current Limit
  • TPS2373-3 (typ.): 0.3-Ω, 1.85-A Current Limit
  • Allocated Power Indicator Outputs
  • Advanced Startup for DC-DC
  • Simplifies Downstream DC-DC Design
  • Compliant to PSE Inrush
  • Automatic Maintain Power Signature (MPS)
  • Auto-adjust MPS for Type 1-2 or 3-4 PSE
  • Supports Ultra-Low Power Standby Modes
  • Primary Adapter Priority Input
  • Supports PoE++ PSE
  • -40°C to 125°C Junction Temperature Range
  • 20-lead VQFN Package

Typische Anwendungen

  • Security Cameras
  • IEEE 802.3bt (Draft) Compliant Devices, 4PPOE, Pass-through System, Systems using Redundant Power Feeds
  • Multiband access points, Pico-base Stations, Video and VoIP Telephones

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieλDom typ.
(nm)
FarbeλPeak typ.
(nm)
IV typ.
(mcd)
VF typ.
(V)
Chiptechnologie50% typ.
(°)
CTol. CBauformQRISOKeramiktypL
(mm)
W
(mm)
H
(mm)
Fl
(mm)
VerpackungZ @ 100 MHz
(Ω)
Zmax
(Ω)
Testbedingung ZmaxIR 2
(mA)
RDC max.
(Ω)
TypWicklungstypWicklungsanzahlL1
(µH)
IR 1
(mA)
RDC1 max.
(Ω)
VR
(V)
DatenratePortsPoEImproved CMRRBetriebstemperaturVT
(V (AC))
MontageartL
(µH)
LSmin.
(nH)
Muster
150060YS75000SPEC
25 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WL-SMCW SMT Mono-color Chip LED Waterclear 590 Gelb 595 120 2 AlInGaP 140 0603 1.6 0.8 0.7 Tape and Reel -40 °C up to +85 °C SMT
742792641SPEC
9 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-CBF SMT-Ferrit 0603 1.6 0.8 0.8 0.3 300 450 250 MHz 2000 0.15 High Current 1 2000 0.15 -55 °C up to +125 °C SMT
744272251SPEC
8 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-SL5 Stromkompensierter SMT Line Filter 10 8.7 6.5 970 0.035 sectional 2 250 2000 0.035 80 1000 SMT 250 1500
885012006060SPEC
8 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WCAP-CSGP MLCCs 50 V(DC)330 pF ±5% 0603 100010 GΩ NP0 Klasse I 1.6 0.8 0.8 0.4 7" Tape & Reel 50 -55 °C up to +125 °C
7490220122SPEC
9 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-LAN LAN Übertrager 17.55 16 98.8 13.97 4PPoE (to 900 mA) 350 10/100/1000BASE-T 1 4PPoE (bis zu 1000 mA) Nein -40 °C up to +105 °C 1500 SMT 350
750317065SPEC
5 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. EFD25 27.03 32.45 13.97 325 SMT 30
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieλDom typ.
(nm)
FarbeλPeak typ.
(nm)
IV typ.
(mcd)
VF typ.
(V)
Chiptechnologie50% typ.
(°)
CTol. CBauformQRISOKeramiktypL
(mm)
W
(mm)
H
(mm)
Fl
(mm)
VerpackungZ @ 100 MHz
(Ω)
Zmax
(Ω)
Testbedingung ZmaxIR 2
(mA)
RDC max.
(Ω)
TypWicklungstypWicklungsanzahlL1
(µH)
IR 1
(mA)
RDC1 max.
(Ω)
VR
(V)
DatenratePortsPoEImproved CMRRBetriebstemperaturVT
(V (AC))
MontageartL
(µH)
LSmin.
(nH)
Muster