Topologie | Sperrwandler |
Schaltfrequenz | 227-278 kHz |
IC-Revision | H |
The TPS23754 and TPS23756 devices have a combined power-over-ethernet (PoE) powered-device (PD) interface and current-mode DC/DC controller optimized specifically for isolated converters. The PoE interface supports the IEEE 802.3at standard.
The TPS23754 and TPS23756 support a number of input voltage ORing options including highest voltage, external adapter preference, and PoE preference. These features allow the designer to determine which power source will carry the load under all conditions.
The PoE interface features the new extended hardware classification necessary for compatibility with high-power midspan power sourcing equipment (PSE) per IEEE 802.3at. The detection signature pin can also be used to force power from the PoE source off. Classification can be programmed to any of the defined types with a single resistor.
The DC/DC controller features two complementary gate drivers with programmable dead time. This simplifies the design of active-clamp forward converters or optimized gate drive for highly-efficient flyback topologies. The second gate driver may be disabled if desired for single MOSFET topologies. The controller also features internal softstart, bootstrap startup source, current-mode compensation, and a 78% maximum duty cycle. A programmable and synchronizable oscillator allows design optimization for efficiency and eases use of the controller to upgrade existing power supply designs. Accurate programmable blanking, with a default period, simplifies the usual current-sense filter design trade-offs.
The TPS23754 device has a 15-V converter startup while the TPS23756 device has a 9-V converter startup. The TPS23754-1 replaces the PPD pin with a no-connect for increased pin spacing.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (µH) | IRP,40K (A) | ISAT (A) | RDC max. (mΩ) | fres (MHz) | Bauform | Version | ISAT1 (A) | ISAT,30% (A) | IR (A) | Material | LR (µH) | Muster | |
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7447779003 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-PD SMT-Speicherdrossel | 3.3 | 4.75 | – | 30 | 55 | 7345 | Robust | 4.5 | 5.6 | 3.3 | – | – | |||
7443634700 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-HCF SMT-Hochstrominduktivität | 47 | 12.8 | 8.5 | 13.42 | 10 | 2013 | SMT | 7.5 | 8.5 | 12.8 | MnZn | 12.45 | |||
768775322 | SPEC | – | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-PD2 HV SMT-Speicherdrossel (High Voltage) | 2200 | – | 0.2 | 7200 | 1.6 | 7850 | – | – | – | 0.15 | – | – | ||
750312794 | SPEC | – | – | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Flyback Transformer | – | – | – | – | – | – | – | – | – | – | – | – |
Artikel Nr. | Datenblatt | Simulation | |
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7447779003 | SPEC | ||
7443634700 | SPEC | ||
768775322 | SPEC | – | |
750312794 | SPEC | – |
Muster |
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Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (µH) | IRP,40K (A) | ISAT (A) | RDC max. (mΩ) | fres (MHz) | Bauform | Version | ISAT1 (A) | ISAT,30% (A) | IR (A) | Material | LR (µH) | Muster |
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