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Texas Instruments UCC25800

Bias Supply Design for Isolated Gate Driver Using UCC25800-Q1 Open-Loop LLC Transformer Driver

Details

TopologieLLC Resonanzwandler
Eingangsspannung12 V
Ausgang 112 V / 1 A
Ausgang 224 V / 1 A
Ausgang 318 V / 1 A
Ausgang 45 V / 1 A
Ausgang 515 V / 1 A

Beschreibung

The LLC topology allows the transformer to have significant leakage inductance, but much smaller primaryto-secondary capacitance, which significantly reduces common-mode current injection through the bias transformer. The LLC converter based on UCC25800 offers a high level of integration, low cost and high efficiency in a compact form factor. The EVM consists of two portions, namely, the pre-regulator board (left half) and the LLC board (right half). The two portions of the board can be used together or used only with the LLCboard, as needed for evaluation.

Eigenschaften

  • High-efficiency half-bridge transformer driver
  • Ultra-low EMI with low interwinding capacitance
  • Smaller and lower-cost transformer
  • Programmable frequency: 0.1 MHz to 1.2 MHz
  • Wide input voltage range: 9 V to 34 V
  • 9 W from 34-V input
  • 6 W from 24-V input
  • 4 W from 15-V input
  • Automatic dead-time adjustment with maximum dead-time programming
  • External clock synchronization for low noise
  • Robust protection features
  • Under voltage lockout (UVLO)
  • Programmable over-current protection (OCP)
  • Input overvoltage protection (OVP)
  • Over temperature protection (TSD)
  • Integrated soft-start to reduce in-rush current
  • External disable function with fault-code output
  • AEC-Q100 qualified for automotive applications:
  • Temperature grade 1: –40°C to +125°C, TA
  • Functional Safety-Capable
  • Documentation available to aid functional safety system design
  • 8-Pin DGN package with thermal pad

Typische Anwendungen

  • Industrial motors, elevators and escalators, UPS and solar inverters
  • Automotive traction inverter & motor control, Automotive on-board charger (OBC), Automotive DC/DC converter
  • EV charging station, DC fast charging station
  • GaN, IGBT and SiC gate transformer driver bias supply

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Downloads Status ProduktserieVin
(V)
VOut1
(V)
PO
(W)
CWW 1
(pF)
L
(µH)
∫Udt
(Vµs)
fswitch
(kHz)
nVersionIC-Referenz Muster
750319836SPEC
7 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-AGDT Auxiliary Gate Drive Transformer 6 9 2 23 40 500 1:1.57 LLC UCC25800
750319834SPEC
7 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-AGDT Auxiliary Gate Drive Transformer 7.5 7.5 2.6 67 70 500 1:1.08 LLC UCC25800
750319835SPEC
7 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-AGDT Auxiliary Gate Drive Transformer 7.5 9 2.1 23 40 500 1:1.29 LLC UCC25800
750319331SPEC
7 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-AGDT Auxiliary Gate Drive Transformer 13 11.5 6 1.3 50 60 500 1:1 LLC UCC25800
750319831SPEC
7 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-AGDT Auxiliary Gate Drive Transformer 15 6 2 56 64 500 2.2:1 LLC UCC25800
750319688SPEC
Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. Power Transformer
750319848SPEC
Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. Power Transformer
Muster
Artikel Nr. Daten­blatt Downloads Status ProduktserieVin
(V)
VOut1
(V)
PO
(W)
CWW 1
(pF)
L
(µH)
∫Udt
(Vµs)
fswitch
(kHz)
nVersionIC-Referenz Muster