IC-Hersteller uPI Semiconductor
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Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 12 V |
| Ausgang 1 | 1 V / 25 A |
Beschreibung
This article will demonstrate the performance improvements that can be obtained when using GaN FETs in combination with suitable GaN FET drivers in 12-V input to 1-V output point-of-load converters. The example design described here uses the uP1966D, a dual-channel, synchronous driver IC from uPI Semiconductor in combination with an EPC2100 GaN asymmetrical half-bridge FET from Efficient Power Conversion.
Weiterführende Informationen
Artikeldaten
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (nH) | LR (nH) | IR (A) | ISAT,10% (A) | ISAT,30% (A) | RDC (mΩ) | fres (MHz) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 744303012 | SPEC | 9 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-HCM SMT-Hochstrominduktivität | 120 | 118 | 31 | 51.2 | 59.8 | 0.325 | 150 | MnZn | ||
| 744303015 | SPEC | 9 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-HCM SMT-Hochstrominduktivität | 155 | 150 | 31 | 44.5 | 51.5 | 0.325 | 110 | MnZn |
| Muster |
|---|
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (nH) | LR (nH) | IR (A) | ISAT,10% (A) | ISAT,30% (A) | RDC (mΩ) | fres (MHz) | Material | Muster |
|---|
