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Overview
| Topology | Buck Converter |
| Input voltage | 12 V |
| Output 1 | 1 V / 25 A |
Description
This article will demonstrate the performance improvements that can be obtained when using GaN FETs in combination with suitable GaN FET drivers in 12-V input to 1-V output point-of-load converters. The example design described here uses the uP1966D, a dual-channel, synchronous driver IC from uPI Semiconductor in combination with an EPC2100 GaN asymmetrical half-bridge FET from Efficient Power Conversion.
More information
Products
| Order Code | Datasheet | Simulation | Downloads | Status | Product series | L (nH) | LR (nH) | IR (A) | ISAT,10% (A) | ISAT,30% (A) | RDC (mΩ) | fres (MHz) | Material | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 744303012 | SPEC | 9 files | Active i| Production is active. Expected lifetime: >10 years. | WE-HCM SMT High Current Flat Wire Inductor | 120 | 118 | 31 | 51.2 | 59.8 | 0.325 | 150 | MnZn | ||
| 744303015 | SPEC | 9 files | Active i| Production is active. Expected lifetime: >10 years. | WE-HCM SMT High Current Flat Wire Inductor | 155 | 150 | 31 | 44.5 | 51.5 | 0.325 | 110 | MnZn |
| Samples |
|---|
| Order Code | Datasheet | Simulation | Downloads | Status | Product series | L (nH) | LR (nH) | IR (A) | ISAT,10% (A) | ISAT,30% (A) | RDC (mΩ) | fres (MHz) | Material | Samples |
|---|
