| Topologie | LLC Resonanzwandler |
| Eingangsspannung | 650-750 V |
| Ausgang 1 | 550 V |
The purpose of this evaluation hardware is to demonstrate the system performance of Cree’s 3rd Generation Silicon Carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) in a full bridge LLC circuit that may be typically used for fast DC chargers for electrical vehicles. The new 1000V rated device in a 4L-TO247 package, specifically designed for SiC MOSFETs, has a Kelvin source connection to improve switching losses and reduce ringing in the gate circuit. It also features a notch between the drain and source pins to increase the creep distance to accommodate higher voltage SiC MOSFETs.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT(A) | RDC max.(mΩ) | fres(MHz) | Bauform | Version | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-PD SMT-Speicherdrossel, 3.5 µH, 14.5 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität3.5 µH | Performance Nennstrom14.5 A | Sättigungsstrom9.5 A | Gleichstromwiderstand8 mΩ | Eigenresonanzfrequenz40 MHz | Bauform1260 | VersionGestanzt | ||||
![]() | WE-PD SMT-Speicherdrossel, 680 µH, 1.2 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität680 µH | Performance Nennstrom1.2 A | – | Gleichstromwiderstand825 mΩ | Eigenresonanzfrequenz1.5 MHz | Bauform1210 | VersionGestanzt | ||||
![]() | 750341672 | Flyback Transformer, –, – | Simulation– | Downloads– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Produktserie Flyback Transformer | – | – | – | – | – | – | – |