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Wolfspeed C3M0065100K | Demoboard CRD-20DD09P-2
20 kW full bridge LLC resonant converter using 1kV SiC MOSFET
Details
| Topologie | LLC Resonanzwandler |
| Eingangsspannung | 650-750 V |
| Ausgang 1 | 550 V |
Beschreibung
The purpose of this evaluation hardware is to demonstrate the system performance of Cree’s 3rd Generation Silicon Carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) in a full bridge LLC circuit that may be typically used for fast DC chargers for electrical vehicles. The new 1000V rated device in a 4L-TO247 package, specifically designed for SiC MOSFETs, has a Kelvin source connection to improve switching losses and reduce ringing in the gate circuit. It also features a notch between the drain and source pins to increase the creep distance to accommodate higher voltage SiC MOSFETs.
Eigenschaften
- Reference Designs by Application
- SpeedFit Design Simulator
- LTspice & PLECS Models
- SpeedVal Kit™ Modular Evaluation Platform
Typische Anwendungen
- fast DC chargers for electric vehicles (EV)
