Topologie | Motor Drive |
Eingangsspannung | 550-850 V |
Ausgang 1 | 420 V / 50 A |
IC-Revision | 1 |
This reference design demonstrates how to use silicon carbide (SiC) MOSFETs to optimize the performance of a motor drive for auxiliary motors in electric vehicles, as well as Heating Ventilation and Air Conditioning (HVAC) and other similar applications. Utilizing SiC MOSFETs for these applications can increase system efficiency, reduce audible noise, and increase power density compared to silicon solutions. Although SiC MOSFETs are capable of achieving very high dv/dt switching transitions, the speed can also be easily controlled with the gate resistor to lower levels that are compatible with standard motor insulation while still achieving lower switching losses than silicon IGBTs.
Artikel Nr. | Datenblatt | Downloads | Status | Produktserie | n | L (µH) | ∫Udt (µVs) | VT (V (DC)) | CWW 1 (pF) | LS (µH) | Bauform | Muster | |
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760301107 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-GDT Gate-Drive-Übertrager | 1.5:1 | 650 | 40.8 | 1500 | 9 | 2.9 | EP5 |
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Artikel Nr. | Datenblatt | Downloads | Status | Produktserie | n | L (µH) | ∫Udt (µVs) | VT (V (DC)) | CWW 1 (pF) | LS (µH) | Bauform | Muster |
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