IC-Hersteller Xilinx
IC-Hersteller (97)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (15)
- Ablic (23)
- Advanced Power (4)
- Allegro Microsystems (81)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (172)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Broadcom (47)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (232)
- Divimath (8)
- Elmos AG (1)
- EPC (99)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (7)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- Ikanos (3)
- IKON (1)
- Indie Semiconductor (5)
- Innovision Semiconductor Inc (2)
- Intel (80)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (2)
- Kinetic Technology (10)
- Lattice semiconductor Corporation (20)
- Littelfuse (1)
- M3 Technology (M3Tek) (7)
- Macnica (16)
- MaxLinear (178)
- MikroE (7)
- MindCet (2)
- Monolithic Power Systems (908)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (31)
- Nisshinbo Micro Device Inc. (10)
- Nordic Semiconductor (1)
- Novosense Micro (1)
- NXP (314)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (112)
- Pulsiv (19)
- Qorvo (86)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (296)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (90)
- SG-Micro (32)
- Silanna Semiconductor (8)
- Silergy Corporation (30)
- Silicon Laboratory Inc. (104)
- Silicontent Technology (57)
- Silvertel (56)
- Skycore Semiconductors (1)
- Skyworks (32)
- Southchip (8)
- Summit Wireless (1)
- Tagore Tech (4)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (18)
- Wolfspeed (7)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Details
| Topologie | Sonstige Topologie |
| IC-Revision | A |
Beschreibung
The Virtex UltraScale FPGA VCU110 Development Kit is the perfect development environment for evaluating the unprecedented levels of performance, system integration and bandwidth provided by Virtex UltraScale devices. This kit provides an ideal platform for developing systems requiring massive data throughput such as 400+ Gbps systems and 28 Gbps backplane applications
Weiterführende Informationen
Artikeldaten
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (nH) | IR 1 (mA) | IR 2 (mA) | ISAT (A) | RDC (mΩ) | fres (MHz) | Typ | H (mm) | W (mm) | IR (A) | Montageart | RDC max. (mΩ) | Material | Version | IRP,40K (A) | ISAT1 (A) | ISAT,30% (A) | Qmin. | LR (nH) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 744308033 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-HCM SMT-Hochstrominduktivität | 330 | – | – | – | 0.37 | 35 | – | 6.8 | 7 | 25 | SMT | – | MnZn | – | 54.3 | 27.3 | 32 | – | 305 | ||
 | 744323068 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-HCI SMT-Hochstrominduktivität | 680 | – | – | – | 4.79 | 51 | – | 2.8 | 10.6 | – | SMT | 5.269 | Superflux | SMT | 19.4 | 8 | 21 | – | 550 | ||
 | 7443320068 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-HCC SMT-Hochstrominduktivität | 680 | – | – | – | – | 108 | – | 9.5 | 11.4 | 26 | SMT | 1.85 | Ferrite | SMT | 40.2 | 35.8 | 39.1 | – | 660 | ||
| 744311100 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-HCI SMT-Hochstrominduktivität | 1000 | – | – | – | 4.6 | 85 | – | 3.8 | 6.9 | – | SMT | 4.6 | Superflux | SMT | 16.8 | 8 | 19 | – | 780 | ||
 | 744025001 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-TPC SMT-Speicherdrossel | 1200 | – | – | 3 | – | 180 | – | 2.8 | 2.8 | 2.6 | SMT | 42 | – | SMT | – | – | – | – | – | ||
 | 74408943033 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-SPC SMT-Speicherdrossel | 3300 | – | – | 3.6 | – | 64 | – | 3.8 | 4.8 | 2.6 | SMT | 36 | – | SMT | – | – | – | – | – | ||
 | 74479887310A | SPEC | 6 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-PMI Power-Multilayer-Induktivität | 10000 | 600 | 850 | 0.125 | 300 | 20 | High Saturation Current | 0.8 | 2 | – | SMT | 390 | – | SMT | – | – | – | 27 | – | ||
 | 74437324220 | SPEC | 8 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-LHMI SMT Speicherdrossel | 22000 | – | – | – | – | 14 | – | 1.8 | 4.06 | – | SMT | 500 | – | – | 1.3 | 1.45 | 2.35 | – | – |
| Artikel Nr. | Datenblatt | Simulation | |
|---|---|---|---|
| 744308033 | SPEC | |
| 744323068 | SPEC | |
| 7443320068 | SPEC | |
| 744311100 | SPEC | |
| 744025001 | SPEC | |
| 74408943033 | SPEC | |
| 74479887310A | SPEC | |
| 74437324220 | SPEC |
| Muster |
|---|
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (nH) | IR 1 (mA) | IR 2 (mA) | ISAT (A) | RDC (mΩ) | fres (MHz) | Typ | H (mm) | W (mm) | IR (A) | Montageart | RDC max. (mΩ) | Material | Version | IRP,40K (A) | ISAT1 (A) | ISAT,30% (A) | Qmin. | LR (nH) | Muster |
|---|
