New ESD diode model (also available with snapback)

In cooperation with the IFE from TU Graz, WE now offers a diode model across all ESD protection components, built on real measurement data with TLP (Transmission Line Pulsing) to capture true device behavior under ESD conditions. Traditional models often use simplified approximations, like shown in the dotted line, while this model reflects actual transient characteristics like snapback delay and conductivity. Our Model can now also simulate the snapback behavior.

Key Advantages:

• Simulate true transient behavior, allowing designs to be tested under realistic conditions and ensuring robust ESD protection.
• Ready-to-use simulation files simplify integration into SPICE-based analyses, speeding up design cycles and time-to-market.
• Reliable simulations reduce testing, development cycles, and the risk of product recalls due to ESD vulnerabilities, while providing insights into device behavior to enable design optimization and ensure consistent ESD resilience across applications, from consumer electronics to industrial devices.