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Cambridge GaN Devices CGD65B240SH2 | Demoboard Quasi-Resonant Flyback 65W Reference Design
H2 series 650 V / 240 mΩ GaN HEMT with ICeGaN® Gate, Current Sense and NL³ Circuit
Details
| Topologie | Sperrwandler |
| Eingangsspannung | 100-260 V |
| Ausgang 1 | 20 V |
| IC-Revision | 2.0 |
Beschreibung
Introducing the CGD65B240SH2, an enhancement mode GaN-on-silicon power transistor that capitalizes on the unique material properties of GaN to deliver high current, high breakdown voltage, and high switching frequency for a wide range of electronics applications..
Eigenschaften
- Using ICeGaN 650 V, 240 mΩ in DFN 5x6
- Power density of >27W/in3
- Vin 100-260 VAC
- Vout 20 VDC
- Maximum Efficiency 93.8%
- Typical frequency range 25 - 240kHz
- No shunt current sense resistors – uses ICeGaN current sense feature
Typische Anwendungen
- PD chargers
Weiterführende Informationen
Artikeldaten
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | Anwendung | L (µH) | VT (V (AC)) | n | Betriebstemperatur | L (mm) | W (mm) | H (mm) | Package | Input | VCE max. (V) | IF max. (mA) | Testbedingung CTR | CTR min. (%) | CTR max. (%) | VISO (V (RMS)) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 749302011 | SPEC | – | 7 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-STST Super Tiny Signal Transformer | Long distance sensing at low frequency | 2000 | 400 | 1:4.5:4.5:1 | -40 °C up to +105 °C | 4.7 | 3.22 | 2.9 | – | – | – | – | – | – | – | – | |
 | 140100146000 | SPEC | 6 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WL-OCPT LSOP-4 | – | – | – | – | -55 °C up to +110 °C | 7.6 | 3.6 | 2 | LSOP4 | DC | 80 | 60 | IF = 5 mA VCE = 5 V | 300 | 600 | 5000 |
| Artikel Nr. | Datenblatt | Simulation | |
|---|---|---|---|
| 749302011 | SPEC | – |
| 140100146000 | SPEC |
| Muster |
|---|
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | Anwendung | L (µH) | VT (V (AC)) | n | Betriebstemperatur | L (mm) | W (mm) | H (mm) | Package | Input | VCE max. (V) | IF max. (mA) | Testbedingung CTR | CTR min. (%) | CTR max. (%) | VISO (V (RMS)) | Muster |
|---|
