IC-Hersteller Cambridge GaN Devices

IC-Hersteller (99)

Cambridge GaN Devices CGD65B240SH2 | Demoboard Quasi-Resonant Flyback 65W Reference Design

Details

TopologieSperrwandler
Eingangsspannung100-260 V
Ausgang 120 V
IC-Revision2.0

Beschreibung

This QR Flyback Reference Design uses our 240 mΩ ICeGaN 650 V device as the primary switching transistor and uses ICeGaN´s integrated current sense feature in the current control loop.This topology highlights the extremely low No-Load Power Consumption of ICeGaN, so crutial for products in this power range, combined with state of the art switching performance and the thermal benefits ICeGaN current sense reducing power dissipation and reducing device temperature.

Eigenschaften

Using ICeGaN 650 V, 240 mΩ in DFN 5x6Power density of >27W/in3Vin 100-260 VACVout 20 VDCMaximum Efficiency 93.8%Typical frequency range 25 - 240kHzNo shunt current sense resistors – uses ICeGaN current sense feature

Typische Anwendungen

  • PD chargers

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieAnwendungL
(µH)
VT
(V (AC))
nBetriebstemperaturL
(mm)
W
(mm)
H
(mm)
PackageInputVCE max.
(V)
IF max.
(mA)
Testbedingung CTRCTR min.
(%)
CTR max.
(%)
VISO
(V (RMS))
Muster
749302011SPEC
7 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-STST Super Tiny Signal Transformer Long distance sensing at low frequency 2000 400 1:4.5:4.5:1 -40 °C up to +105 °C 4.7 3.22 2.9
140100146000SPEC
6 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WL-OCPT LSOP-4 -55 °C up to +110 °C 7.6 3.6 2 LSOP4 DC 80 60 IF = 5 mA
VCE = 5 V
300 600 5000
Artikel Nr. Daten­blatt Simu­lation
749302011SPEC
140100146000SPEC
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads Status ProduktserieAnwendungL
(µH)
VT
(V (AC))
nBetriebstemperaturL
(mm)
W
(mm)
H
(mm)
PackageInputVCE max.
(V)
IF max.
(mA)
Testbedingung CTRCTR min.
(%)
CTR max.
(%)
VISO
(V (RMS))
Muster