IC manufacturers Cambridge GaN Devices

IC manufacturers (99)

Cambridge GaN Devices CGD65B240SH2 | Demoboard Quasi-Resonant Flyback 65W Reference Design

Overview

TopologyFlyback Converter
Input voltage100-260 V
Output 120 V
IC revision2.0

Description

This QR Flyback Reference Design uses our 240 mΩ ICeGaN 650 V device as the primary switching transistor and uses ICeGaN´s integrated current sense feature in the current control loop.This topology highlights the extremely low No-Load Power Consumption of ICeGaN, so crutial for products in this power range, combined with state of the art switching performance and the thermal benefits ICeGaN current sense reducing power dissipation and reducing device temperature.

Features

Using ICeGaN 650 V, 240 mΩ in DFN 5x6Power density of >27W/in3Vin 100-260 VACVout 20 VDCMaximum Efficiency 93.8%Typical frequency range 25 - 240kHzNo shunt current sense resistors – uses ICeGaN current sense feature

Typical applications

  • PD chargers

Products

Order Code Data­sheet Simu­lation Downloads Status Product seriesApplicationL
(µH)
VT
(V (AC))
nOperating TemperatureL
(mm)
W
(mm)
H
(mm)
PackageInputVCE max.
(V)
IF max.
(mA)
Test Condition CTRCTR min.
(%)
CTR max.
(%)
VISO
(V (RMS))
Samples
749302011SPEC
7 files Active i| Production is active. Expected lifetime: >10 years.WE-STST Super Tiny Signal Transformer Long distance sensing at low frequency 2000 400 1:4.5:4.5:1 -40 °C up to +105 °C 4.7 3.22 2.9
140100146000SPEC
6 files Active i| Production is active. Expected lifetime: >10 years.WL-OCPT LSOP-4 -55 °C up to +110 °C 7.6 3.6 2 LSOP4 DC 80 60 IF = 5 mA
VCE = 5 V
300 600 5000
Order Code Data­sheet Simu­lation
749302011SPEC
140100146000SPEC
Samples
Order Code Data­sheet Simu­lation Downloads Status Product seriesApplicationL
(µH)
VT
(V (AC))
nOperating TemperatureL
(mm)
W
(mm)
H
(mm)
PackageInputVCE max.
(V)
IF max.
(mA)
Test Condition CTRCTR min.
(%)
CTR max.
(%)
VISO
(V (RMS))
Samples