IC manufacturers Cambridge GaN Devices

IC manufacturers (98)

Cambridge GaN Devices CGD65B240SH2 | Demoboard Quasi-Resonant Flyback 65W Reference Design

H2 series 650 V / 240 mΩ GaN HEMT with ICeGaN® Gate, Current Sense and NL³ Circuit

Overview

TopologyFlyback Converter
Input voltage100-260 V
Output 120 V
IC revision2.0

Description

Introducing the CGD65B240SH2, an enhancement mode GaN-on-silicon power transistor that capitalizes on the unique material properties of GaN to deliver high current, high breakdown voltage, and high switching frequency for a wide range of electronics applications..

Features

  • Using ICeGaN 650 V, 240 mΩ in DFN 5x6
  • Power density of >27W/in3
  • Vin 100-260 VAC
  • Vout 20 VDC
  • Maximum Efficiency 93.8%
  • Typical frequency range 25 - 240kHz
  • No shunt current sense resistors – uses ICeGaN current sense feature

Typical applications

  • PD chargers

Products

Order Code Data­sheet Simu­lation Downloads Status Product seriesApplicationL
(µH)
VT
(V (AC))
nOperating TemperatureL
(mm)
W
(mm)
H
(mm)
PackageInputVCE max.
(V)
IF max.
(mA)
Test Condition CTRCTR min.
(%)
CTR max.
(%)
VISO
(V (RMS))
Samples
749302011SPEC
7 files Active i| Production is active. Expected lifetime: >10 years.WE-STST Super Tiny Signal Transformer Long distance sensing at low frequency 2000 400 1:4.5:4.5:1 -40 °C up to +105 °C 4.7 3.22 2.9
140100146000SPEC
6 files Active i| Production is active. Expected lifetime: >10 years.WL-OCPT LSOP-4 -55 °C up to +110 °C 7.6 3.6 2 LSOP4 DC 80 60 IF = 5 mA
VCE = 5 V
300 600 5000
Order Code Data­sheet Simu­lation
749302011SPEC
140100146000SPEC
Samples
Order Code Data­sheet Simu­lation Downloads Status Product seriesApplicationL
(µH)
VT
(V (AC))
nOperating TemperatureL
(mm)
W
(mm)
H
(mm)
PackageInputVCE max.
(V)
IF max.
(mA)
Test Condition CTRCTR min.
(%)
CTR max.
(%)
VISO
(V (RMS))
Samples